نتایج جستجو برای: equilibrium green’s function (negf)

تعداد نتایج: 1325383  

2005
Magnus Paulsson Thomas Frederiksen

The intense investigations of molecular devices, as an alternative to standard electronics components, underlines the need to model the conduction mechanisms of nano-scale conductors. In addition to measurements of the elastic conductance through point-contacts, atomic-wires and molecules, recent experiments have shown inelastic tunneling currents through, for example, a hydrogen molecule attac...

2013
Tarek A. Ameen Yasser M. El-Batawy A. A. Abouelsaood

Self assembled quantum dots have shown a great promise as a leading candidate for infrared detection at room temperature. In this paper, a theoretical model of the absorption coefficient of quantum dot devices is presented. Both of bound to bound absorption and bound to continuum absorption are taken into consideration in this model. This model is based on the effective mass theory and the Non ...

Journal: :journal of nanostructures 2012
z. ahangari m. fathipour

a comprehensive study of schottky barrier mosfet (sbmosfet) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within non-equilibrium green's function formalism. quantum confinement increases the effective schottky barrier height (sbh). (100) orientation provides lower effective schottky barrier height in comparison ...

Journal: :J. Comput. Physics 2008
Haiyan Jiang Sihong Shao Wei Cai Pingwen Zhang

Non-equilibrium Green’s function (NEGF) is a general method for modeling non-equilibrium quantum transport in open mesoscopic systems with many body scattering effects. In this paper, we present a unified treatment of quantum device boundaries in the framework of NEGF with both finite difference and finite element discretizations. Boundary treatments for both types of numerical methods, and the...

Journal: :iranian journal of electrical and electronic engineering 0
m. akbari eshkalak roudsar

abstract: this paper is the first study on the impact of ambient temperature on the electrical characteristics and high frequency performances of double gate armchair graphene nanoribbon field effect transistor (gnrfet). the results illustrate that the gnrfet under high temperature (ht-gnrfet) has the highest cut-off frequency, lowest sub-threshold swing, lowest intrinsic delay and power delay ...

2006
M. Pourfath

Exceptional electronic and mechanical properties together with nanoscale diameter make carbon nanotubes (CNTs) promising candidates for nanoscale transistors. Semiconducting CNTs can be used as a channel for field-effect transistors (FETs), and metallic CNTs can serve as interconnect wires. In short devices carrier transport through the device is nearly ballistic [1]. The non-equilibrium Green’...

Journal: :Journal of Chemical Physics 2021

Due to their small size and unique properties, single-molecule electronics have long seen research interest from experimentalists theoreticians alike. From a theoretical standpoint, modeling these systems using electronic structure theory can be difficult due the importance of electron correlation in determination molecular this computationally expensive consider, particularly multiconfiguratio...

2010
Denis A. Areshkin Branislav K. Nikolić

The recent fabrication of graphene nanoribbon GNR field-effect transistors poses a challenge for firstprinciples modeling of carbon nanoelectronics due to many thousand atoms present in the device. The state of the art quantum transport algorithms, based on the nonequilibrium Green function formalism combined with the density-functional theory NEGF-DFT , were originally developed to calculate s...

2010

This article describes a model for Resonant Tunneling Diodes (RTDs) implemented within ATLAS framework. The model is based on a self-consistent solution of Poisson and Non-Equilibrium Green’s Function (NEGF) equations with an effective mass Hamiltonian. Simulation results are presented for generic GaAs and SiGe RTDs.

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