One of the ultimate goals in electron microscopy is 3-dimensional (3D) atomic scale information. The main challenge in obtaining 3D information in microscopy originates from the limited depth resolution. The depth resolution of scanning transmission electron microscopy (STEM) remains above ~10 nm, even with state-of the-art STEM with aberration correction [1]. Through-focal series and confocal ...

During the past two decades, there have been tremendous developments in near-field imaging and local probing techniques. Examples are the Scanning Tunneling Microscope (STM), Atomic Force Microscope (AFM), Near-field Scanning Optical Microscope (NSOM), Photon Scanning Tunneling Microscope (PSTM), and Scanning Thermal Microscope (SThM).Results showed that the average reflectance for a dopant con...

Particle beam/hollow cathode-optical emission spectroscopy (PB/HC-OES) is presented as a tool for the determination of metal ion loading in transferrin (Tf). The elemental specificity of optical emission spectroscopy provides a means of assessing metal ion concentrations as well as the relative amounts of metal per unit protein concentration (up to 2 moles of Fe per mole of protein). The PB/HC-...

In order to calculate the redis tr ibut ion of boron in silicon by both diffusion and autodoping dur ing epitaxial growth, certain materials parameters must be known as a function of temperature. The parameters are the diffusion coefficient of boron, the evaporat ion coefficient of boron from silicon, and the silicon evaporation rate in a hydrogen ambient. The value of the diffusion coefficient...