نتایج جستجو برای: fe dopant

تعداد نتایج: 82969  

Journal: :Analytical chemistry 2004
Maggie Tam Herbert H Hill

The unique capability of secondary electrospray ionization (SESI) as a nonradioactive ionization source to detect analytes in both liquid and gaseous samples was evaluated using aqueous solutions of three common military explosives: cyclo-1,3,5-trimethylene-2,4,6-trinitramine (RDX), nitroglycerin (NG) and pentaerythritol tetranitrate (PETN). The adducts formed between the compounds and their re...

2018
Richard Daubriac Emmanuel Scheid R. Daubriac E. Scheid S. Joblot R. Beneyton P. Acosta Alba S. Kerdilès F. Cristiano

In this paper, we present an enhanced Differential Hall Effect method (DHE) for Si and SiGe ultrathin layers for the investigation of dopant activation in the surface region with sub-nanometre resolution. In the case of SiGe case, which constitutes the most challenging process, we show the reliability of the SC1 chemical solution (NH4OH:H2O2:H2O) thanks to its slow etch rate, stoichiometry cons...

2004
Camille Y. Jones Jian Wu LiPing Li Sossina M. Haile

Proton uptake in undoped and Y-doped BaPrO3 has been measured by cold neutron prompt-gamma activation analysis, and compared to the proton uptake in Gd-doped BaCeO3, as determined by the same technique. The conventional proton incorporation model of perovskites in which oxygen ion vacancies, generated by the introduction of the trivalent dopant onto the tetravalent perovskite site, are filled w...

Journal: :Nanotechnology 2010
Jules A Gardener Irving Liaw Gabriel Aeppli Ian W Boyd Richard J Chater Tim S Jones David S McPhail Gopinathan Sankar A Marshall Stoneham Marcin Sikora Geoff Thornton Sandrine Heutz

We report a new method for introducing metal atoms into silicon wafers, using negligible thermal budget. Molecular thin films are irradiated with ultra-violet light releasing metal species into the semiconductor substrate. Secondary ion mass spectrometry and x-ray absorption spectroscopy show that Mn is incorporated into Si as an interstitial dopant. We propose that our method can form the basi...

Journal: :npj computational materials 2022

Abstract Polarons generally affect adversely the photochemical and photophysical properties of transition metal oxides. However, excited-state dynamics polarons are not fully established to date thus require an atomistic understanding. We focus on ?-Fe 2 O 3 with photoexcitation, electron injection, heterovalent doping as small polaron models, conduct simulations ab initio adiabatic molecular (...

2016
Eva Hakansson Akif Kaynak Abbas Kouzani

Complex permittivity of conducting polypyrrole (PPy)-coated Nylon-Lycra textiles is measured using a free space transmission measurement technique over the frequency range of 1-18 GHz. The aging of microwave dielectric properties and reflection, transmission and absorption for a period of 18 months is demonstrated. PPy-coated fabrics are shown to be lossy over the full frequency range. The leve...

2012
Luxi Li Xianbo Shi Cherice M. Evans Gary L. Findley

The structure of low-n Rydberg states doped into supercritical fluids represents an important probe to investigate solvation effects, especially near the solvent (or perturber) critical point. We have investigated the solvation of dopant low-n Rydberg states in various perturbing fluids. This systematic study was performed from low perturber number densities to the density of the triple point l...

2007
J. F. Suyver R. Meester J. J. Kelly A. Meijerink

For certain dopants, luminescence measurements allow one to distinguish between single-ion and pair-state dopant emission in a (semiconductor) host. In a bulk crystal the concentration of each of these dopant-states can be calculated from the dopant fraction f present in the material, and is found to correlate with luminescence measurements. However, for a nanocrystalline host-lattice, these co...

2011
H. A. Rahnamaye Aliabad H. Arabshahi A. Hamel Aliabadi

Structural and electronic properties of pure In2O3 and its alloys with Sc, Y, La and Ac including the band gap, the effective mass and the effect of dopant ionic radius have been investigated using density functional theory (DFT). The full potential linearized augmented plane wave (FL-LAPW) method was used with the local density approximation (LDA+U). The calculated results indicated that, subs...

2015
You Zhai Moonsub Shim

Annealing or growth at high temperatures for an extended period of time is considered detrimental for most synthetic strategies for high-quality Mn-doped II-VI semiconductor nanocrystals. It can lead to the broadening of size distribution and, more importantly, to the loss of dopants. Here, we examine how ripening can be beneficial to doping in a simple "heat-up" approach, where high dopant con...

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