Finite Elements Method simulation of Total Ionizing Dose effects on 22 nm bulk Fin Field Effect Transistor (FinFET) devices using the commercial software Synopsys Sentaurus TCAD are presented. The simulation parameters are extracted by calibrating the charge trapping model to experimental results on 400 nm SiO2 capacitors irradiated under zero bias. The FinFET device characteristics are calibra...

For the prediction of the device performance of FinFET structures three-dimensional device simulation is inevitable. Due to the strong quantum mechanical confinement in the channel, quantum correction models need to be applied. Two of these models, where one is based on the correction of the densityof-states in a pre-processing step and the other calculates a correction for the band edge energy...

سابقه و هدف: امروزه با گسترش فعالیت واحدهای صنعتی، غلظت آلاینده­ ها در هوا افزایش یافته انسان­ از طریق تنفس، بلعیدن جذب پوستی معرض آن­ها قرار می­ گیرند. میان تمام آلاینده ­ها، فلزات سنگین به دلیل ماهیت سمی خود بسیار مورد توجه متخصصان زیست ­محیطی گرفته ­اند. بالای محیط ­زیست، می ­تواند خطر اثرات نامطلوب بر سلامتی انسان را دهد. شهرک صنعتی ناجی زنجان ریخته ­گری مس آلیاژهای آن، ­عنوان یکی منابع انت...

In this work, we use an experimentally calibrated 3D quantum mechanically corrected device simulation to study the random dopant fluctuation (RDF) on DC characteristics of 16-nm-gate trapezoidal bulk fin-type field effect transistor (FinFET) devices. The fixed top-fin width, which is consistent with the realistic process by lithography, of trapezoidal bulk FinFET devices is considered in this s...

The Triple gate FinFET architecture has emerged as a viable contender for the ultimate scalability of CMOS devices. FinFET structure offers better control over device leakage currents than the conventional bulk MOSFET structure. In this paper, we present the 6 transistor (6T) SRAM cell implementation using the 22 nm gate length FinFET devices modeled using a 3-D device simulator. The performanc...