El objetivo de este trabajo es proporcionar a los estudiantes electrónica, computación y áreas afines, un panorama la construcción funcionamiento transistores efecto campo aleta (FinFET), cuales son dispositivos extremadamente diminutos, con longitud compuerta en el rango nanómetros, se fabrican técnica silicio sobre aislante (SOI). Utilizando FinFETs tipo n p diseñaron diagramas esquemáticos l...

The advancement and challenges of field effect transistors are based on multi-gate from the perspective structure material. Multi-gate field-effect (Multi-gate FET) have steeper sub-threshold slopes, which can reduce short channel improve mobility drive current. A fin transistor (FinFET) gate-all-around (GAAFET) attractive structures most compatible with today’s standard machining technologies....

In this study, a three-dimensional “atomistic” circuitdevice coupled simulation approach is advanced to investigate the process-variation and random dopant induced characteristic fluctuations in planar metal-oxidesemiconductor field-effect-transistor (MOSFET) static random access memory (SRAM) from 65-nm to 16-nm gate length. As the gate length of the planar MOSFETs scales from 65 nm to 16 nm, ...

In this paper we investigated the line edge roughness (LER) effects on the 22-nm and 14nm inversion mode (IM) and jounctionless (JL) FinFETs by TCAD simulation. We examined the gate LER (GLER) effects and the fin LER (FLER) effects on the device variability separately. The simulation results show that the GLER-induced device variations will increase as the channel length decrease as expectation...

Amount of power consumption is one of the important measures of performance of an integrated circuit. CMOS is the latest technology which is in use till date. This paper gives an overview of the power dissipation occurring in CMOS circuit. The paper then describes the advantages and limitations of power optimization techniques of CMOS. As we go deeper into the nanometer scale, MOS transistors f...

This paper presents a novel methodology for IC speed-up in 32 nm FinFET. By taking advantage of independently controlling two gates of IG-FinFET, we develop the boosting structures that can improve the signal propagation on interconnect significantly. Furthermore, the circuit area and power dissipation issues are also taken into account. With the addition of boosting path, the full booster can ...

This paper is devoted to examining the ability of artificial neural networks to model the forward transmission coefficient, which represents an important figure of merit for microwave transistors. This analysis is carried out for two different on-wafer devices, namely GaAs HEMT and Si FinFET. As far as the HEMT technology is concerned, the model is developed for three devices which differ in ga...