A novel carrier stored trench bipolar transistor (CSTBT) with split gate (SG) and recessed emitter (SGRET CSTBT) is proposed. The proposed device features a SG structure thicker oxide layer under the emitter, respectively. Compared conventional CSTBT (RET CSTBT), not only significantly reduces gate-collector capacitance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlin...