نتایج جستجو برای: ge interaction

تعداد نتایج: 584317  

2012
Takashi NAKAMURA Taizo NAGURA Katsuyuki SATO Masao OHNISHI

Poly-trans-[(2-carboxyethyl) germasesquioxane] (Ge-132) is the most common organic germanium compound. The ingestion of Ge-132 promotes bile secretion. We assessed the rat caecal characteristics after the administration of Ge-132 and raffinose, a prebiotic oligosaccharide, because both Ge-132 and some prebiotics can change the fecal color to yellow. We also compared the changes in the caecal fl...

2004
B. Y. Jin J. B. Ketterson S. Foner Francis Bitter Ivan K. Schuller I. K. Schuller

Studies are reported of the upper critical fields of Nbo.53Tio.47-Ge multilayers consisting of thick Ge layers and varying-thickness Nbo.s3Tio.47 layers. Both the angular dependence and the temperature dependence of the upper critical fields indicate a dimensional crossover at a Nbo.s3Tio.47 layer thickness near 200 ~ . All the 2D samples display a cusplike upper critical field angular dependen...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه صنعتی خواجه نصیرالدین طوسی - دانشکده علوم 1389

رالکترواکسایش الکل ها (متانول، اتانول، 1- پروپانول و 2- پروپانول) توسط نیکل فرونشانی شده در لایه نازکی از پلیمر اورتوآمینوفنل سنتز شده بر روی الکترود گرافیت، در حضور آنیون فعال سطحی سدیم دودسیل سولفات (sds)، (ge/poap-sds/ni) بررسی شد. از روبش پتانسیل در محلول سدیم هیدروکسید m 1/0 به منظور غنی سازی سطح از گونه های ni(iii) استفاده شد. شواهد امر گواه بر الکترواکسایش مستقیم الکل ها بر روی الکترود g...

2011
Yishai Ron Ami D Sperber Arie Levine Orit Shevah Ram Dickman Yona Avni Haim Shirin

BACKGROUND/AIMS To evaluate associations between delayed gastric emptying (GE) assessed by the octanoic acid breath test and upper gastrointestinal (GI) symptoms. METHODS A historical, prospective study included 111 consecutive symptomatic adults referred for a GE breath test because of upper abdominal symptoms suggestive of delayed GE. Exclusion criteria included underlying organic disease a...

2011
Friederike Wöhrlin Angelika Preiß - Weigert

glycidol undergoing 100 % transformation into 3-MCPD (reference value) (NaCl) [TF=0.67] GE stearate (NaCl) [TF=0.85] GE linolenate (NaCl) [TF=0.67] GE oleate (NaCl) [TF=0.71] glycidol undergoing 100 % transformation into 3-MBPD (reference value) (NaBr) [TF=0.48] GE stearate (NaBr) [TF=0.51] GE linolenate (NaBr) [TF=0.31] Linear (GE linolenate (NaBr) [TF=0.31]) Challenges in Analysing Glycidyl F...

2014
Yan Cai Lionel C. Kimerling Thomas Lord Jurgen Michel Gerbrand Ceder

Germanium (Ge) is an optically active material with the advantages of Si-CMOS compatibility and monolithic integration. It has great potential to be used as the light emitter for Si photonics. Tensile strain and n-type doping are two key properties in Ge to achieve optical gain. This thesis mainly focuses on: (1) physical understandings of the threshold behavior of Ge-on-Si bulk laser and the t...

2017
Moustafa Abdelaal Hegazi Mohamed Hesham Sayed Haifa Hasan Sindi Osama Elsayed Bekhit Basem Salama El-Deek Faisal M. Yaqoub Alshoudri Amroo Khaled Noorelahi

Previous studies in Jeddah, western Saudi Arabia, showed rotavirus (RV) prevalence around 40% in pediatric inpatients with gastroenteritis (GE) with a maximum level during cooler months. Currently, there are no data on impact of rotavirus vaccine (RVV) on RV-GE in Saudi Arabia. Therefore, this study was conducted to assess impact of RVV on incidence and severity of RV-GE in hospitalized pediatr...

2009
Eric S. Landry Alan J.H. McGaughey J. H. McGaughey

Abstract The thermal resistance of semiconductor thin films is predicted using lattice dynamics (LD) calculations and molecular dynamics (MD) simulations. We consider Si and Ge films with thicknesses, LF , between 0.2 nm and 30 nm that are confined between larger extents of the other species (i.e., Ge/Si/Ge and Si/Ge/Si structures). The LD predictions are made in the classical limit for compari...

2005
F. ZHENG

Growth and evolution of germanium (Ge) nanocrystals embedded into a silicon oxide (SiO2) system have been studied based on the Ge content of co-sputtered Ge-SiO2 films using transmission electron microscopy (TEM) and Xray photoelectron spectroscopy (XPS). It was found that when the proportion of Ge relative to Ge oxide is 20%, TEM showed that annealing the samples at 800C for 60 min resulted in...

2014
Mastura Shafinaz Zainal Abidin Tahsin Morshed Hironori Chikita Yuki Kinoshita Shunpei Muta Mohammad Anisuzzaman Jong-Hyeok Park Ryo Matsumura Mohamad Rusop Mahmood Taizoh Sadoh Abdul Manaf Hashim

The effects of annealing temperatures on composition and strain in SixGe1-x, obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 °C for 1 s. All annealed samples show single crystalline structure in (100) orientation. A significant appearance of Si-Ge vibration mode pe...

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