Hybrid photoelectrochemistry and heterojunction solar cells made from carbon nanotubes and silicon nanowires show high energy conversion efficiencies of up to 6%.

Articles you may be interested in Enhanced separation efficiency of photoinduced charges for antimony-doped tin oxide (Sb-SnO2)/TiO2 heterojunction semiconductors with varied Sb doping concentration

Bulk-heterojunction (BHJ) solar cells based on organic small molecules and polymers are the focus of increasing attention by science and commerce. In organic photovoltaic devices, a conjugated polymer layer is used as the donor, while a fullerene-based derivative is used as the acceptor. Poly(3,4ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) is one of the most common interfacial ma...

While the performance of polymer−polymer bulk heterojunction organic photovoltaics (OPVs) is poor compared with polymer−fullerene OPVs, reducing or eliminating micrometer-scale phase separation in all-polymer OPVs may dramatically improve performance. Herein, we demonstrate that 2-ureido-4[1H]-pyrimidinone (UPy) quadruple hydrogen bonding interactions can be used to prevent micrometer-scale pha...

Articles you may be interested in Short circuit current improvement in planar heterojunction organic solar cells by multijunction charge transfer Appl.

AlGaAs/GaAs heterojunction bipolar transistors (HBTs) are used for digital and analog microwave applications with frequencies as high as Ku band. HBTs can provide faster switching speeds than silicon bipolar transistors mainly because of reduced base resistance and collector-to-substrate capacitance. HBT processing requires less demanding lithography than GaAs FETs, therefore, HBTs can cost les...

Abstract: In this paper, a novel tunnel field effect transistor (TFET) is introduced, thatdue to its superior gate controllability, can be considered as a promising candidate forthe conventional TFET. The proposed electrically doped heterojunction TFET(EDHJTFET) has a 3D core-shell nanotube structure with external and internal gatessurrounding the channel that employs el...

While emphasis has been placed on coherent heterojunctions for high speed device structures, the use of mismatched layers unstrained via misfit dislocations has been limited. Yet, in certain cases, the misfit dislocated layer can be advantageous. For example, in the growth of GaAs on Ina.53 GaO.47 As it has been shown that the misfit dislocations can be isolated to the GaAs interface region sug...