We propose and demonstrate a purely electrical method for measuring the effective temperature T, of majority carriers under the injection of hot minority carriers. The T, of holes in a thin p-type InGaAs layer, heated by electron injection from an InAlAs layer in a three-terminal lattice-matched heterostructure, was determined by measuring the thermionic emission current of holes over another s...

CdS is an important semiconductor used in optoelectronic devices. Simple techniques for growing CdS nanostructures are thus essential at a low cost. This study presents a novel method for growing single-crystal n-type CdS nanowires on p-type CdTe films by thermal annealing in an H2S/N2 mixed gas flow, which does not require the help of a catalyst or template. The formation process and growth me...

Two-dimensional molybdenum disulfide (MoS2) is a promising material for ultrasensitive photodetector owing to its favourable band gap and high absorption coefficient. However, their commercial applications are limited by the lack of high quality p-n junction and large wafer scale fabrication process. A high speed Si/MoS2 p-n heterojunction photodetector with simple and CMOS compatible approach ...

Realization of group IV heterostructure devices requires the accurate measurement of the energy band offsets in Si/Si12xGex and Si/Si12x2yGexCy heterojunctions. Using admittance spectroscopy, we have measured valence-band offsets in Si/Si12xGex heterostructures and conduction-band and valence-band offsets in Si/Si12x2yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Measured...

The interface formation mechanism during the molecular-beam epitaxy (MBE) of InAs/GaP has been studied with the aid of the In–Ga–P phase diagram. It is discovered that an initial dissolution and crystallization process similar to liquid phase epitaxy (LPE) may happen at sufficiently high temperature, resulting in a graded composition at the interface. Consequently, “parasitic LPE/MBE” is the na...

This paper presents a magnetically sensitive transistor using a nc-Si:H/c-Si heterojunction as an emitter junction. By adopting micro electro-mechanical systems (MEMS) technology and chemical vapor deposition (CVD) method, the nc-Si:H/c-Si heterojunction silicon magnetically sensitive transistor (HSMST) chips were designed and fabricated on a p-type <100> orientation double-side polished silico...

This work reports on the construction of a Bi24O31Cl10/BiOCl heterojunction via a simple thermal annealing method. The X-ray diffraction (XRD) results indicated that the phase transformation from BiOCl to Bi24O31Cl10 could be realized during the thermal annealing process. The high-resolution transmission electron microscopy (HRTEM) images, X-ray photoelectron spectroscopy (XPS) binding energy s...

In amorphous/crystalline silicon heterojunction solar cells, an inversion layer is present at the front interface. By combining numerical simulations and experiments, we examine the contribution of the inversion layer to lateral transport and assess whether this layer can be exploited to replace the front transparent conductive oxide (TCO) in devices. For this, heterojunction solar cells of dif...