Hybrid multi-functional nanomaterials comprising two or more disparate materials have become a powerful approach to obtain advanced materials for environmental remediation applications. In this work, an Ag-Ag2O/TiO2@polypyrrole (Ag/TiO2@PPy) heterojunction has been synthesized by assembling a self-stabilized Ag-Ag2O (p type) semiconductor (denoted as Ag) and polypyrrole (π-conjugated polymer) o...

The performance of organic solar cell is greatly determined by the nanoscale heterojunction morphology, and finding a practical method to achieve advantageous nanostructure remains a challenge. We demonstrate here that ordered bulk heterojunction (OBHJ) solar cell can be fabricated assisted by a simple, cost-effective nanoimprinting lithography method using patterned silk fibroin film mold at r...

MoS2 nanodot decorated In2S3 nanoplates were successfully synthesized via a modified one-pot method. The In2S3/MoS2 heterojunction nanocomposite exhibits superior optical and photoelectrochemical performance to the bare ones, owing to the synergistic effect.

Correction for 'Enhanced room temperature NO2 response of NiO-SnO2 nanocomposites induced by interface bonds at the p-n heterojunction' by Jian Zhang et al., Phys. Chem. Chem. Phys., 2016, 18, 5386-5396.

The introduction of a low band-gap oligomer, oligo(benzo[1,2,5]thiadiazole-alt-3,3'''-dihexylquaterthiophene) (BT4T) improved the performance of P3HT:PCBM bulk heterojunction organic photovoltaic cells due to improved UV-vis absorption and increased P3HT crystallinity.

Two non-fullerene small molecules based on fluoranthene-fused imide were developed as acceptors for solution-processed inverted organic bulk heterojunction (BHJ) solar cells, which showed good power conversion efficiency and high open-circuit voltage.

Tunnel FETs are a promising alternate to MOSFETs for low power design due to the ability to scale threshold voltage and hence supply voltage, without increase in OFF currents. However, they suffer from low ON currents. Demonstrated here is theenhancement in ION in arsenide–antimonide staggered-gap heterojunction (hetj) tunnel field-effect transistors (TFETs) by engineering the effective tunneli...

Introduction:GaAsySb1-y/In0xGa1-xAs based III-V staggered hetero-junction Tunnel Field Effect Transistors were demonstrated with MOSFET-like high drive currents at low Vds [1], demonstrating feasibility of TFETs to scale supply voltage for future low power logic applications. More than 2x enhancement in Ion was demonstrated over the In0.7Ga0.3As homo-junction counterpart due to reduction in the...

The mid-infrared (MIR) spectral range, pertaining to important applications, such as molecular "fingerprint" imaging, remote sensing, free space telecommunication, and optical radar, is of particular scientific interest and technological importance. However, state-of-the-art materials for MIR detection are limited by intrinsic noise and inconvenient fabrication processes, resulting in high-cost...