نتایج جستجو برای: heterojunction

تعداد نتایج: 7306  

Journal: :Physical chemistry chemical physics : PCCP 2014
Hemlata Patil Wang Xi Zu Akhil Gupta Vijila Chellappan Ante Bilic Prashant Sonar Anushri Rananaware Sidhanath V Bhosale Sheshanath V Bhosale

A novel solution-processable non-fullerene electron acceptor 6,6'-(5,5'-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(thiophene-5,2-diyl))bis(2,5-bis(2-ethylhexyl)-3-(thiophen-2-yl)pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione) (DPP1) based on fluorene and diketopyrrolopyrrole conjugated moieties was designed, synthesized and fully characterized. DPP1 exhibited excellent solubility and high thermal stability ...

2011
Chi-Feng Lin Mi Zhang Shun-Wei Liu Tien-Lung Chiu Jiun-Haw Lee

This paper introduces the fundamental physical characteristics of organic photovoltaic (OPV) devices. Photoelectric conversion efficiency is crucial to the evaluation of quality in OPV devices, and enhancing efficiency has been spurring on researchers to seek alternatives to this problem. In this paper, we focus on organic photovoltaic (OPV) devices and review several approaches to enhance the ...

Journal: :Photochemical & photobiological sciences : Official journal of the European Photochemistry Association and the European Society for Photobiology 2015
Neel M Makwana Rachael Hazael Paul F McMillan Jawwad A Darr

In this work, the photocatalytic disinfection of Escherichia coli (E. coli) using dual layer ceramic wafers, prepared by a simple and low-cost technique, was investigated. Heterojunction wafers were prepared by pressing TiO2 and WO3 powders together into 2 layers within a single, self-supported monolith. Data modelling showed that the heterojunction wafers were able to sustain the formation of ...

2005
F. N Ü ESCH

We investigated cyanine heterojunction photovoltaic devices using carbocyanine dyes as donors and buckminsterfullerene (C60) as acceptor. In particular, we focused on the influence of cyanine counterions on the photovoltaic device characteristics. It was found that counterions can be displaced in the applied electric field and give rise to important hystereses in the current-voltage characteris...

2016
Jaewoo Shim Seyong Oh Dong-Ho Kang Seo-Hyeon Jo Muhammad Hasnain Ali Woo-Young Choi Keun Heo Jaeho Jeon Sungjoo Lee Minwoo Kim Young Jae Song Jin-Hong Park

Recently, negative differential resistance devices have attracted considerable attention due to their folded current-voltage characteristic, which presents multiple threshold voltage values. Because of this remarkable property, studies associated with the negative differential resistance devices have been explored for realizing multi-valued logic applications. Here we demonstrate a negative dif...

Journal: :Physical chemistry chemical physics : PCCP 2015
Zhimin Liang Mingze Su Yangyang Zhou Li Gong Chuanxi Zhao Keqiu Chen Fangyan Xie Weihong Zhang Jian Chen Pengyi Liu Weiguang Xie

The interfacial reaction and energy level alignment at the Si/transition metal oxide (TMO, including MoO3-x, V2O5-x, WO3-x) heterojunction are systematically investigated. We confirm that the interfacial reaction appears during the thermal deposition of TMO, with the reaction extent increasing from MoO3-x, to V2O5-x, and to WO3-x. The reaction causes the surface oxidation of silicon for faster ...

2013
Sushobhan Avasthi William E. McClain Gabriel Man Antoine Kahn Jeffrey Schwartz James C. Sturm

In contrast to the numerous reports on narrow-bandgap heterojunctions on silicon, such as strained Si1 xGex on silicon, there have been very few accounts of wide-bandgap semiconducting heterojunctions on silicon. Here, we present a wide-bandgap heterojunction—between titanium oxide and crystalline silicon—where the titanium oxide is deposited via a metal-organic chemical vapor deposition proces...

2016
Il Ku Kim Jun Hyung Jo Jung-Ho Yun

This paper focuses on nano-morphology-controlled small-molecule organic solar cells without solvent treatment for high power-conversion efficiencies (PCEs). The maximum high PCE reaches up to 7.22% with a bulk-heterojunction (BHJ) thickness of 320 nm. This high efficiency was obtained by eliminating solvent additives such as 1,8-diiodooctane (DIO) to find an alternative way to control the domai...

1996
Philippe Jansen Hiroshi Mizuta Ken Yamaguchi Mathias Wagner

The source resistance of a heterojunction field-effect transistor ~HFET!, whose reduction is mandatory for high-performance devices, consists of an ohmic contact resistance and an access resistance. The access region is located between the geometrical source and the geometrical source side of the gate contact. By means of a quantum-mechanical modeling program, the effect of changes in layer str...

Journal: :Nano letters 2011
Ya Yang Wenxi Guo Yan Zhang Yong Ding Xue Wang Zhong Lin Wang

We report the first observation of piezotronic effect on the output voltage of a flexible heterojunction solar cell. The solar cell was fabricated by contacting poly(3-hexylthiophene) (P3HT) with one end of a ZnO micro/nanowire to form a p-n heterojunction on a flexible polystyrene (PS) substrate. The open-circuit voltage V(oc) of the solar cell was characterized by tuning the strain-induced po...

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