نتایج جستجو برای: heterojunction

تعداد نتایج: 7306  

2015
Duyen H. Cao Constantinos C. Stoumpos Christos D. Malliakas Michael J. Katz Omar K. Farha Joseph T. Hupp Mercouri G. Kanatzidis

Articles you may be interested in Titanium dioxide/silicon hole-blocking selective contact to enable double-heterojunction crystalline silicon-based solar cell Appl. High efficiency sequentially vapor grown n-i-p CH3NH3PbI3 perovskite solar cells with undoped P3HT as p-type heterojunction layer Parameters influencing the deposition of methylammonium lead halide iodide in hole conductor free per...

2017
Liu Han Haohao Dong Dong Mao Baolv Hua Qinyu Li Dong Fang

Heterojunction system has been proved as one of the best architectures for photocatalyst owing to extending specific surface area, expanding spectral response range, and increasing photoinduced charges generation, separation, and transmission, which can provide better light absorption range and higher reaction site. In this paper, Indium Sulfide/Flexible Electrospun Carbon Nanofiber (In2S3/CNF)...

2009
Vladimir Švrček Ivan Turkevych Michio Kondo

A silicon nanocrystals (Si-ncs) conjugated-polymer-based bulk-heterojunction represents a promising approach for low-cost hybrid solar cells. In this contribution, the bulk-heterojunction is based on Si-ncs prepared by electrochemical etching and poly(3-hexylthiophene) (P3HT) polymer. Photoelectric properties in parallel and vertical device-like configuration were investigated. Electronic inter...

Journal: :Nanotechnology 2010
Hsu-Shen Wang Shih-Yung Chen Ming-Hsin Su Yuh-Lin Wang Kung-Hwa Wei

We have fabricated inverted heterojunction solar cell devices incorporating [6,6]-phenyl-C(61)-butyric acid methyl ester/poly(3-hexylthiophene) core/shell nanorod arrays by using an anodic alumina oxide template. The internal quantum efficiencies and external quantum efficiencies of these core/shell nanorod inverted solar cells were higher than those of the corresponding conventional inverted b...

2015
Mahmut Tosun Deyi Fu Sujay B. Desai Changhyun Ko Jeong Seuk Kang Der-Hsien Lien Mohammad Najmzadeh Sefaattin Tongay Junqiao Wu Ali Javey

In this work, we report lateral heterojunction formation in as-exfoliated MoS2 flakes by thickness modulation. Kelvin probe force microscopy is used to map the surface potential at the monolayer-multilayer heterojunction, and consequently the conduction band offset is extracted. Scanning photocurrent microscopy is performed to investigate the spatial photocurrent response along the length of th...

2015
Kjell Cnops German Zango Jan Genoe Paul Heremans M. Victoria Martinez-Diaz Tomas Torres David Cheyns

The use of non-fullerene acceptors in organic photovoltaic (OPV) devices could lead to enhanced efficiencies due to increased open-circuit voltage (VOC) and improved absorption of solar light. Here we systematically investigate planar heterojunction devices comprising peripherally substituted subphthalocyanines as acceptors and correlate the device performance with the heterojunction energetics...

Journal: :Nanoscale 2015
Victor S Balderrama Josep Albero Pedro Granero Josep Ferré-Borrull Josep Pallarés Emilio Palomares Lluis F Marsal

In this work interdigitated heterojunction photovoltaic devices were manufactured. A donor layer of P3HT nanopillars was fabricated by soft nanoimprinting using nanoporous anodic alumina templates. Subsequently, the PC70BM acceptor layer was deposited by spin coating on top of the P3HT nanopillars using a solvent that would not dissolve any of the previous material. Anisole solvent was used bec...

2013
D. Muñoz C. Voz J. Puigdollers F. Villar J. Bertomeu J. Andreu J. Damon-Lacoste

In this work, we investigate heterojunction emitters deposited by Hot-Wire CVD on p-type crystalline silicon. The emitter structure consists of an n-doped film (20 nm) combined with a very thin intrinsic hydrogenated amorphous silicon buffer layer (5 nm). The microstructure of these films has been studied by Spectroscopic Ellipsometry in the UV-visible range. These measurements reveal that the ...

2002
R. PEREZ A. MUfiOZ F. FLORES

The effect of an Al metal intralayer on the ZnSe-Ge heterojunction band offset has been theoretically analysed using a consistent tight-binding calculation. In our analysis we show: (i) first, that the heterojunction band offset is basically modified by the first metal monolayer deposited at the interface; (ii) the changes in the band-offset are mainly due to the modifications introduced in the...

2015
Carla Aramo Antonio Ambrosio Michelangelo Ambrosio Maurizio Boscardin Paola Castrucci Michele Crivellari Marco Cilmo Maurizio De Crescenzi Francesco De Nicola Emanuele Fiandrini Valentina Grossi Pasqualino Maddalena Maurizio Passacantando Sandro Santucci Manuela Scarselli Antonio Valentini

A significant resonant tunneling effect has been observed under the 2.4 V junction threshold in a large area, carbon nanotube-silicon (CNT-Si) heterojunction obtained by growing a continuous layer of multiwall carbon nanotubes on an n-doped silicon substrate. The multiwall carbon nanostructures were grown by a chemical vapor deposition (CVD) technique on a 60 nm thick, silicon nitride layer, de...

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