Computational study of heterojunction graphene nanoribbon tunneling transistors with p-d orbital tight-binding method" (2014).

This paper projects the enhanced drive current of a ntype electrostatically doped (ED) tunnel field-effect transistor (ED-TFET) based on heterojunction and band-gap engineering via TCAD 2-D device simulations. The homojunction ED-TFET device utilizes the electrostatic doping in order to create the source/drain region on an intrinsic silicon nanowire that also felicitates dynamic re-configurabil...

Polymer aggregation correlated transition from Schottky-junction to bulk heterojunction organic solar cells" (2014).

We report the first successful application of an ordered bicontinuous gyroid semiconducting network in a hybrid bulk heterojunction solar cell. The freestanding gyroid network is fabricated by electrochemical deposition into the 10 nm wide voided channels of a self-assembled, selectively degradable block copolymer film. The highly ordered pore structure is ideal for uniform infiltration of an o...

Metal corrugated surfaces have the potential of enhancing optical absorption through surface plasmon (SP) excitation facilitated by light-metal interactions. The successful utilization of metal corrugation induced optical absorption can improve the response of free carrier absorption (FCA), based HEterojunction Interfacial Workfunction Internal Photoemission (HEIWIP) detectors. This article rep...

Study and analysis of a proposed high-voltage high current switching n-p-n silicon germanium single-heterojunction bipolar transistor (SHBT) is performed using 2D MEDICI device simulator. A theoretical formulation is provided to substantiate the simulation results obtained regarding quasi-saturation phenomenon in bipolar transistors. Comparison with the conventional high-voltage current switchi...

We demonstrate that high-injection barrier effects associated with the collector-base silicon-germanium (SiGe) to silicon (Si) heterojunction are an important design constraint for SiGe heterojunction bipolar transistors (HBTs) operating at cryogenic temperatures. Due to its thermally activated nature, these barrier effects can have important dc and ac consequences at cryogenic temperatures eve...

We have calculated the piezoelectric field and charge distribution for various III-nitride heterostructures. Our calculations include strain energy minimization and doping effects, and are presented to show the magnitude of piezoelectric effects in strained layers. We compare our calculated results to device results where available. These include the two-dimensional electron gas in heterojuncti...

Copper oxide (Cu2O)-based heterojunction solar cells were fabricated by spin-coating and electrodeposition methods, and photovoltaic properties and microstructures were investigated. Zinc oxide (ZnO) and Cu2O were used as nand p-type semiconductors, respectively, to fabricate photovoltaic devices based on In-doped tin oxide/ZnO/Cu2O/Au heterojunction structures. Short-circuit current and fill f...

To investigate the hole transport across amorphous/crystalline silicon heterojunctions, solar cells with varying band offsets were fabricated using amorphous silicon suboxide films. The suboxides enable good passivation if covered by a doped amorphous silicon layer. Increasing valence band offsets yield rising hole transport barriers and reduced device effciencies. Carrier transport by thermal ...