We describe the use of organic and metal oxide semiconductors to form wide-bandgap heterojunctions to crystalline silicon. We use these semiconductors to demonstrate a heterojunction which both blocks electrons and passes holes, and a complementary heterojunction which blocks holes and passes electrons and blocks holes. The carrier transport functions are demonstrated through simple device stru...

The chemical composition of the CuInSe2 /CdS heterojunction interface is investigated by angle resolved x-ray photoelectron spectroscopy, Auger electron spectroscopy, and secondary ion mass spectroscopy in combination with selective etching of CdS. We demonstrate that ;0.8 monolayer of Cd is incorporated into the first 1–3 atomic layers of the CuInSe2 . This is accompanied by significant Cu dep...

Silicon heterojunction solar cells have high opencircuit voltages thanks to excellent passivation of the wafer surfaces by thin intrinsic amorphous silicon (aSi:H) layers deposited by plasma-enhanced chemical vapor deposition (PECVD). By using in-situ plasma diagnostics and ex-situ film characterization, we show that the best a-Si:H films for passivation are produced from deposition regimes clo...

Tremendous increment in the high speed demands of data rate results in the continuous development in Type II InP/GaAsSb/InP Dual Heterojunction Bipolar Transistor Device. Physical based two dimensional device simulators, Atlas tool is used to study the DC operation and performance of InP/GaAsSb Dual Heterojunction Bipolar Transistor Device approaching Giga Hertz frequency range. Gallium Arsenid...

Electrical carrier separation from a photoexcited photochromic molecule could be a promising method for controlling the photosensitivity of such a molecule. We report an efficient carrier separation from a photochromic diarylethene (DAE) molecule by adopting a device structure with a heterojunction consisting of an n-type diarylethene layer and a p-type layer of N,N'-di(1-naphthyl)-N,N'-dipheny...

The paper deals with the fabrication of a p-CuS-n-Si nanocone heterojunction based highly sensitive broad band photodetector. Cone-like one dimensional Si nanostructures formed by metal assisted chemical etching, with superior antireflection characteristics have been used as templates for fabrication of the heterojunction. Covellite CuS material was synthesized by a simple chemical reaction for...

We report the fabrication of a three dimensional branched ZnO/Si heterojunction nanowire array by a two-step, wafer-scale, low-cost, solution etching/growth method and its use as photoelectrode in a photoelectrochemical cell for high efficiency solar powered water splitting. Specifically, we demonstrate that the branched nanowire heterojunction photoelectrode offers improved light absorption, i...

High frequency pN heterojunction diodes with cutoff frequencies over 1 THz have been fabricated using narrow bandgap high-mobility semiconductors. The pN heterojunction is composed of a 30 nm thick p-type In0.27Ga0.73Sb alloy and a 130 nm thick In0.69Al0.31As0.41Sb0.59 n-layer. A high-mobility n-type InAs0.66Sb0.34 contact layer is used to connect the mesa diode to a metal Ohmic contact. These ...

The heterojunction between amorphous silicon (sub)oxides (a-SiOx:H, 0<x<2) and crystalline silicon (c-Si) is investigated. We combine chemical vapor deposition with in-system photoelectron spectroscopy in order to determine the valence band offset ∆EV and the interface defect density, being technologically important junction parameters. ∆EV increases from ≈ 0.3 eV for the a-Si:H/c-Si interface ...

UNLABELLED Ordered ZnO nanorod array/p-GaN heterojunction light-emitting diodes (LEDs) have been fabricated by introducing graphene as the current spreading layer, which exhibit improved electroluminescence performance by comparison to the LED using a conventional structure (indium-tin-oxide as the current spreading layer). In addition, by adjusting the diameter of ZnO nanorod array in use, the...