نتایج جستجو برای: high voltage electrical field

تعداد نتایج: 2891505  

Journal: :journal of sciences islamic republic of iran 0

the variations of the electrical conductivity with temperature and electric field of the ternary alloy of gallium, aluminium and arsenic (al0.75ga0.25as) with atomic compositions of 99/1 and 98/2 have been investigated. the electrical conductivity of the alloy increases with temperature according to the relation, ? = ?0 exp (??/kt). the activation energy calculated from this empirical relation ...

Journal: :Journal of biomolecular screening 2003
Paul Burnett Janet K Robertson Jeffrey M Palmer Richard R Ryan Adrienne E Dubin Robert A Zivin

Designing high-throughput screens for voltage-gated ion channels has been a tremendous challenge for the pharmaceutical industry because channel activity is dependent on the transmembrane voltage gradient, a stimulus unlike ligand binding to G-protein-coupled receptors or ligand-gated ion channels. To achieve an acceptable throughput, assays to screen for voltage-gated ion channel modulators th...

Journal: :Ulusal travma ve acil cerrahi dergisi = Turkish journal of trauma & emergency surgery : TJTES 2011
Sevdegül Karadaş Hayriye Gönüllü Mehmet Reşit Oncü Dağhan Işık Yasin Canbaz

BACKGROUND The purpose of this study was to investigate the demographic and clinical characteristics of electrical injuries, laboratory findings, complications, and mortality and morbidity rates of these injuries. METHODS Patients with electrical injuries admitted to the emergency department between January 2006-2010 were retrospectively analyzed. The cases were evaluated by age, gender, sour...

Journal: :Nature communications 2016
Emily G Bittle James I Basham Thomas N Jackson Oana D Jurchescu David J Gundlach

Parameters used to describe the electrical properties of organic field-effect transistors, such as mobility and threshold voltage, are commonly extracted from measured current-voltage characteristics and interpreted by using the classical metal oxide-semiconductor field-effect transistor model. However, in recent reports of devices with ultra-high mobility (>40 cm(2) V(-1) s(-1)), the device ch...

2012
A. Soltani

Electrical conductivity of a highly boron doped chemical vapor deposited diamond thin film has been studied at different temperatures under high electric field conditions. Current-voltage characteristics have been measured using pulsed technique to reduce thermal effects. Experimental results evidence deep impurity impact ionization avalanche in p-type diamond up to room temperature.

Journal: :International Journal of Molecular Sciences 2008
Kgakgamatso Mphale Mal Heron

A controlled fire burner was constructed where various natural vegetation species could be used as fuel. The burner was equipped with thermocouples to measure fuel surface temperature and used as a cavity for microwaves with a laboratory quality 2-port vector network analyzer to determine electrical conductivity from S-parameters. Electrical conductivity for vegetation material flames is import...

ژورنال: سلامت کار ایران 2021

Introduction: The application of particles’ electrical mobility in the electric field has always been an important concern, as the functional basis of a number of particle measuring and classification instrumentations. The objective of this study was to design and construct an aerosol particles classification system using electrical mobility feature in laboratory scale. Methodology: This labo...

Journal: :Analytical chemistry 2002
Alex I K Lao Dieter Trau I-Ming Hsin

Electric field flow fractionation (EFFF) is a powerful separation technique based on an electrical field perpendicular to a pressure-driven flow. Previous studies of microelectric field flow fractionation (micro-EFFF) indicate that separation performance was limited due to a weak effective electric field caused by polarization layers on the electrode surfaces. In this work, we report on a micro...

2014
Sheng-Chia Hsu Yiming Li

In this work, we study the impact of random interface traps (RITs) at the interface of SiO x /Si on the electrical characteristic of 16-nm-gate high-κ/metal gate (HKMG) bulk fin-type field effect transistor (FinFET) devices. Under the same threshold voltage, the effects of RIT position and number on the degradation of electrical characteristics are clarified with respect to different levels of ...

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