The stability of the commonly used red cell radio labels chromium-51, indium-(111 or 113m), and technetium-99m, within intact red cells and stroma and their distribution within the cell were compared in undamaged and heat damaged red cells in relation to the clinical use of heat damaged cells in the assessment of splenic function. Chromium-51 labelled haemoglobin both in undamaged and heat dama...

The substrate lattice structure may have a considerable influence on the formation of quantum well states in a metal overlayer material. Here we study three model systems using angle resolved photoemission and low energy electron diffraction: indium films on Si(111) and indium and lead on Si(100). Data are compared with theoretical predictions based on density functional theory. We find that th...

In this work, InSb nanowires are grown vertically on Si (111) with metal organic chemical vapor deposition using InAs as seed layer, instead of external metal catalyst. Two groups of InSb nanowires are fabricated and characterized: one group presents Indium droplets at the nanowire's free end, while the other, in contrast, ends without Indium droplet but with pyramid-shaped InSb. The indium-dro...

Extreme electron accumulation with sheet density greater than 10(13) cm(-2) is almost universally present at the surface of indium nitride (InN). Here, x-ray photoemission spectroscopy and secondary ion mass spectrometry are used to show that the surface Fermi level decreases as the Mg concentration increases, with the sheet electron density falling to below 10(8) cm(-2). Surface space-charge c...

A review of the dependence of the electron mobility on the free carrier concentration for gallium nitride and indium nitride nanowires grown using hot-wall chemical vapour deposition is presented. Gallium nitride nanowires exhibit mobilities of 100 cm2/Vs to below 1 cm2/Vs for carrier concentrations of 1019 to 1020 cm−3. Theoretical estimations and annealing experiments indicate that the nanowi...