Spin orbit coupling plays a non-perturbation effect in many recently developed novel fields including topological insulators and spin-orbit assistant Mott insulators. In this paper, strongly temperature-dependent spin orbit coupling, revealed by weak anti-localization, is observed at low temperature in 5d strongly correlated compound, SrIrO3. As the temperature rising, increase rate of Rashba c...

The theory of the insulating state discriminates between insulators and metals by means of a localization tensor, which is finite in insulators and divergent in metals. In absence of time-reversal symmetry, this same tensor acquires an off-diagonal imaginary part, proportional to the dc transverse conductivity, leading to quantization of the latter in two-dimensional systems. I provide evidence...

We report successful spin injection into the surface states of topological insulators by using a spin pumping technique. By measuring the voltage that shows up across the samples as a result of spin pumping, we demonstrate that a spin-electricity conversion effect takes place in the surface states of bulk-insulating topological insulators Bi(1.5)Sb(0.5)Te(1.7)Se(1.3) and Sn-doped Bi(2)Te(2)Se. ...

Future integrated circuits and packages will require extraordinary dielectric materials for interconnects to allow transistor advances to be translated into system-level advances. Exceedingly low-permittivity and low-loss materials are required at every level of the electronic system, from chip-level insulators to packages and printed wiring boards. In this review, the requirements and goals fo...

ABSTRACT: We investigate the mechanism of spin gap formation in a two-dimensional model relevant to Mott insulators such as CaV4O9. From the perturbation expansion and quantum Monte Carlo calculations, the origin of the spin gap is ascribed to the four-site plaquette singlet in contrast to the dimer gap established in the generalized dimerized Heisenberg model. We investigate the mechanism of s...