نتایج جستجو برای: interface thermal resistance

تعداد نتایج: 780815  

Journal: :TRANSACTIONS OF THE JAPAN SOCIETY OF MECHANICAL ENGINEERS Series B 2002

2011
Kafil M. Razeeb Eric Dalton

Packaging of semiconductor electronic device is a challenge due to the progressive increase in the power level of operating devices which is associated with the increasing device performance. As semiconductor device feature sizes continue to be reduced, ensuring reliable operation has become a growing challenge. The effective transfer of heat from an integrated circuit (IC) and its heat spreade...

2005
Patrick K. Schelling Li Shi Kenneth E. Goodson

important aspect of computer design, with device performance being significantly affected by temperature. In addition, device lifetime can be decreased drastically because of large thermal stresses that occur especially at interfaces. The ability of a structure to remove heat is best quantified by its thermal resistance, which is given by the temperature difference divided by input power. In mi...

2009
BO HUNG KIM Debjyoti Banerjee Raymundo Arroyave Bo Hung Kim

Molecular Dynamics Simulations of Heat Transfer in Nanoscale Liquid Films. (May 2009) Bo Hung Kim, B.A., Yonsei University; M.S., Texas A&M University Co-Chairs of Advisory Committee: Dr. Ali Beskok Dr. Tahir Cagin Molecular Dynamics (MD) simulations of nano-scale flows typically utilize fixed lattice crystal interactions between the fluid and stationary wall molecules. This approach cannot pro...

2004
H. Zhao J. B. Freund

Detailed phonon scattering at an ideal Si–Ge interface is studied with a linear lattice dynamics model. Frequency dependent transmission coefficients indicate the significance of acoustic-optical phonon mode conversion at the interface. Applied to multiple interfaces, the method shows how the overall thermal resistance approaches a finite (Bloch mode) limit with the increasing number of interfa...

2014
John H. Taphouse L. Smith R. Marder Baratunde A. Cola

With the on-going increase in the power density of electronic devices, thermal management remains a central issue for upholding device performance and reliability. Thermal interface materials (TIMs), used to conduct heat across the multiple interfaces between the device and heat sink, with unprecedentedly low thermal resistance and a high degree of mechanical compliance to accommodate mismatche...

Journal: :Small 2011
Yanan Yue Jingchao Zhang Xinwei Wang

Limited internal phonon coupling and transfer within graphene in the out-of-plane direction significantly affects graphene-substrate interfacial phonon coupling and scattering, and leads to unique interfacial thermal transport phenomena. Through the simultaneous characterization of graphene and SiC Raman peaks, it is possible, for the first time, to distinguish the temperature of a graphene lay...

Journal: :Nanotechnology 2013
John H Taphouse Thomas L Bougher Virendra Singh Parisa Pour Shahid Saeed Abadi Samuel Graham Baratunde A Cola

Vertical carbon nanotube (CNT) forests bonded at room temperature with sprayed on nanoscale polymer coatings are found by measurement to produce thermal resistances that are on a par with those of conventional metallic solders. These results are achieved by reducing the high contact resistance at CNT tips, which has hindered the development of high performance thermal interface materials based ...

Journal: :journal of modern processes in manufacturing and production 2015
hassan gheisari ebrahim karamian

most of the materials used in the industry of aero-engine components generally consist of titaniumalloys. advanced materials, because of their excellent combination of high specific strength, lightweight and general corrosion resistance. in fact, chemical wear resistance of aero-engine alloyprovides a serious challenge for cutting tool material during the machining process. the reductionin cutt...

Journal: :The Review of scientific instruments 2010
Brian D Iverson John E Blendell Suresh V Garimella

Thermal diffusion measurements on polymethylmethacrylate-coated Si substrates using heated atomic force microscopy tips were performed to determine the contact resistance between an organic thin film and Si. The measurement methodology presented demonstrates how the thermal contrast signal obtained during a force-displacement ramp is used to quantify the resistance to heat transfer through an i...

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