The mechanisms and characteristics of hot carrier stress-induced drain leakage current degradation in thinoxide n-MOSFET’s are investigated. Both interface trap and oxide charge effects are analyzed. Various drain leakage current components at zero V gs such as drain-to-source subthreshold leakage, band-to-band tunneling current, and interface trapinduced leakage are taken into account. The tra...

Low-power memories typically operate in the subthreshold region of device; however, as supply voltage continues to decrease, impact leakage current on SRAM stability becomes more significant. The traditional method measuring static noise tolerance only considers effect voltage, and measurement results are not accurate enough. Therefore, this paper proposes a leakage-current-based analysis that ...

Thepurpose of this study was to determine the link between induction voltages from various electrical loads. We used a residual current device (RCD) circuit that operates with capacitor as DC voltage reading tool. The reads value o

There are three major sources of leakage current today, namely the sub-threshold leakage, gate leakage and the reverse biased junction band-to-band-tunneling leakage. These currents depend on the logic state of a CMOS circuit as determined by input pattern. Consequently, there exists a pattern that will produce the highest leakage current. Previously, researchers have investigated the problem o...

Electrical insulation is an important part of all electrical systems. The level of insulation safety provided by an insulator depends on the amount of leakage current flowing on its surface. Actually increased leakage current causes a part of high voltage to appear at dead end of insulator. This voltage may sometimes be of order of 1000 to 5000 Volts depending upon weather conditions. Such a le...