We report directly grown strongly adherent graphene on Co3O4(111) by carbon molecular beam epitaxy (C MBE) at 850 K and density functional theory (DFT) findings that the first graphene layer is reconstructed to fit the Co3O4 surface, while subsequent layers retain normal graphene structure. This adherence to the Co3O4 structure results from partial bonding of half the carbons to top oxygens of ...

ÐThis paper presents a design methodology for high-speed Booth encoded parallel multiplier. For partial product generation, we propose a new modified Booth encoding (MBE) scheme to improve the performance of traditional MBE schemes. For final addition, a new algorithm is developed to construct multiple-level conditional-sum adder (MLCSMA). The proposed algorithm can optimize final adder accordi...

In recent years, new types of semiconductor heterostructures consisting of only one material in di1erent crystal structures, such as wurtzite/zinc-blende heterostructures (heteropolytypic structures) are under discussion. Such heterostructures maintain a completely defect-free, lattice matched, and coherent interface and e1ects due to di1erent chemical constituents can be avoided. In this eld, ...

Many low bit-rate speech coders represent the spectral envelope by an all-pole digital filter whose coefficients are calculated by a form of linear prediction (LP) analysis. The lower the bit-rate, the more critical will be the accuracy of the spectral analysis for achieving good quality speech. This paper compares four known techniques: a technique based on cubic spline interpolation, DAP, MVD...

This paper presents a relative humidity predictions using feedforward artificial neural network (FFNN). Relative humidity values obtained from weather records for Malaysia are used in training the FFNNs. The prediction of the relative humidity is in terms of Sun shine ration and cloud cover. However, three statistical parameters, namely, mean absolute percentage error, MAPE, mean bias error, MB...

We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE). Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN grating region is removed from the backside to form freestanding GaN gratings, and the patterned growth is subse...

The growth of inclined GaAs nanowires (NWs) during molecular beam epitaxy (MBE) on the rotating substrates is studied. The growth model provides explicitly the NW length as a function of radius, supersaturations, diffusion lengths and the tilt angle. Growth experiments are carried out on the GaAs(211)A and GaAs(111)B substrates. It is found that 20° inclined NWs are two times longer in average,...

SrTiO3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the route to the monolithic integration of various complex oxides on the complementary metal-oxide-semiconductor silicon platform. Among functional oxides, ferroelectric perovskite oxides offer promising perspectives to improve or add functionalities on-chip. We review the growth by MBE of the ferroelectric compoun...

An electrochemical surface treatment has been developed that decreases the reverse-bias leakage current in Schottky diodes fabricated on GaN grown by molecular-beam epitaxy ~MBE!. This treatment suppresses current flow through localized leakage paths present in MBE-grown GaN, while leaving other diode characteristics, such as the Schottky barrier height, largely unaffected. A reduction in leaka...

III-V nanostructures have the potential to revolutionize optoelectronics and energy harvesting. For this to become a reality, critical issues such as reproducibility and sensitivity to defects should be resolved. By discussing the optical properties of molecular beam epitaxy (MBE) grown GaAs nanomembranes we highlight several features that bring them closer to large scale applications. Uncapped...