Characteristics of ALD-ZnO Thin Film Transistor In article number 2101953, Jun Yang, Amin Bahrami, Kornelius Nielsch, and co-workers report that during atomic layer deposition (ALD)-ZnO process, H2O2 provides an oxygen-rich environment inducing less oxygen vacancies into the ZnO thin film. After applying a bias stress 10 V for 3600 s, threshold voltage shift H2O2-ZnO film transistor is 0.13 V.

Thin films of indium doped zinc sulfide (ZnS) for different indium (In) concentrations (x=0.0 - 0.8) were deposited onto glass substrate by spray pyrolysis method at 523K temperature. Aqueous solution of zinc acetate, indium chloride and thiorea were used to deposit the In-Zn-S film. The deposited thin films were characterized by Energy dispersive X-ray (EDX), Scanning electron microscopy (SEM)...

The influence of the grain boundary (GB) specific area s GB on the appearance of ferromagnetism in Fe-doped ZnO has been analysed. A review of numerous research contributions from the literature on the origin of the ferromagnetic behaviour of Fe-doped ZnO is given. An empirical correlation has been found that the value of the specific grain boundary area s GB is the main factor controlling such...

By exploiting colloidal properties, such as transparency, rheology and versatile chemistry, we propose to synthesize new photonic nanomaterials based on colloidal solutions and thin films. This contribution highlights our efforts to elaborate and to characterize nanostructures based on the ZnO–TiO2 system. Using a recently developed sol–gel route to synthesize new Ti@ZnO organosols, we were abl...

Nitrogen-doped zinc oxide (N: ZnO) films have been prepared by oxidizing reactive RF magnetron-sputtering zinc nitride (Zn-N) films. The effect of oxidation temperature and oxidation time on the growth, transmittance, and electrical properties of the film has been explored. The results show that both long oxidation time and high oxidation temperature can obtain the film with a good transmittanc...

Fluoride in spray pyrolysis precursor solutions for silicon-doped zinc oxide (SiZO) transparent conductor thin films significantly improves their electrical conductivity by enhancing silicon doping efficiency and not, as previously assumed, by fluoride doping. Containing only earth-abundant elements, SiZO thus prepared rivals the best solution-processed indium-doped ZnO in performance.

The catalytic effect of gold seed particles deposited on a substrate prior to zinc oxide (ZnO) thin film growth by magnetron sputtering was investigated. For this purpose, selected ultra thin gold layers, with thicknesses close to the percolation threshold, are deposited by thermal evaporation in ultra high vacuum (UHV) conditions and subsequently annealed to form gold nanodroplets. The ZnO str...

Pure and 1 at% gallium (Ga)-doped zinc oxide (ZnO) thin films have been prepared with a low-cost spin coating technique on quartz substrates and annealed at 500 °C in vacuum ∼10-3 mbar to create anion vacancies and generate charge carriers for photovoltaic application. Also, 0.5-1.5 at% extra zinc species were added in the precursor sol to investigate changes in film growth, morphology, optical...

Zinc Oxide (ZnO) has attracted interest due to its potential applications including nonlinear optical devices, blue‐violet emission device, buffer layer for GaN‐based devices, visible‐range transparent electrodes for solar cell and flat panel displays, surface acoustic wave devices, piezoelectric and piezo‐ optic devices, gas sensors for oxygen, and integrated opt...

This paper presents the findings of a design, modeling, and fabrication study of ZnO and PbZr0 3Ti0 7O3 thin-film bulk acoustic resonators and filters. Measurements of the high-frequency responses of ZnO resonators having different area are used to develop an acoustic model that accurately represents resonator impedance data. The models are also used to interpret -parameter measurements on thin...