Articles you may be interested in Growth mechanisms of plasma-assisted molecular beam epitaxy of green emission InGaN/GaN single quantum wells at high growth temperatures Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy Effects of different plasma species (atomic N, metastable N 2 * , a...

A simple and convenient model is proposed to elucidate the optical characteristics of Cd1−xMnxTe crystals using experimental data on light reflection in magnetic field. The model is based on the quasi-oscillator concept accounting both for the exciton and fundamental absorption edge contributions. The energy dependencies of refraction index and absorption coefficient are presented for Mn mole f...

Relaxation spectra have been measured at 20°C for mono-, diand triethanolamine in the pure liquid state and in a 0.6 mole fraction mixture with 1,4-dioxane. The general resemblance to the dielectric behaviour of alcohols and aminoalcohols shows that relaxation is governed by association effects. In this regard, several features point to significantly differing behaviour of the mono compound in ...

Abstract We report on the development of a comb-assisted cavity ring-down spectrometer for trace water mole fraction determinations in high purity gases. By tuning laser light coincidence with H 2 O absorption line at 1.3946 µ m, we were able to determine sub-ppm relative concentrations vapour N sub-percent statistical uncertainty. The sensitivity was carefully assessed, yielding detection limi...

The conduction and selectivity of calcium/sodium ion channels are described in terms of ionic Coulomb blockade, a phenomenon based on charge discreteness and an electrostatic model of an ion channel. This novel approach provides a unified explanation of numerous observed and modelled conductance and selectivity phenomena, including the anomalous mole fraction effect and discrete conduction band...

A Silicon tunnel FET with Si1-x Gex source is investigated and optimized for improved performance. In order to optimize the device performance, Germanium mole fraction and the length of the SiGe region is varied and the optimum values are obtained. Moreover, the source/channel hetero-junction is assumed graded. The grading distance is varied from zero (abrupt hetero-junction) to total channel l...

A new electron mobility model for strained-Si MOSFETs has been developed. The mobility increase produced by the strain in the silicon layer is accurately studied and described by means of simple analytical expressions. This model can be easily included in conventional device and circuit simulators. The need of a surface-roughness model dependent on the germanium mole fraction is highlighted. Th...

For the binary liquid systems formic acid + acetic acid, formic acid + propionic acid, and acetic acid + propionic acid, we give the results of new calorimetric measurements of the molar excess enthalpy H at 25 °C, 30 °C, 40 °C, and 60°C, covering the entire range of compositions. H is always positive, increases linearly with the temperature, and is slightly asymmetric with respect to the mole ...