This paper presents the analysis and design of an integrated interface for grounded capacitive sensors. To reduce the effects of parasitic cable capacitances, a feedforward technique has been applied. In combination with the use of a special front-end amplifier this yields high immunity for a parasitic cable capacitance. The major nonidealities of the interface circuit have been analyzed. The c...

The reliability assessment of electric machines plays a very critical role in today’s engineering world. requires good understanding motors and their root causes. Electric mostly fail due to mechanical problems bearing damage is the main source this. bearings can be damaged by mechanical, electrical, thermal stresses. Among all stresses, researcher should give special attention electrical one, ...

In this paper, we discuss the process, layout and device technologies of FinFET to obtain high RF and analog/mixed-signal performance circuits. The fin patterning due to Side-wall transfer (SWT) technique is useful to not only fabricate narrow fin line but also suppress the fin width variation comparing with ArF and EB lithography. The H2 annealing after Si etching is useful for not only to imp...

This paper presents a current-fed full-bridge boost DC-AC-DC converter with transformer isolation operating without switching power dissipation. The output voltage is regulated by dc-ac converter whose frequency changes with a constant turn-off time of transistors. The proposed converter is devoid of parasitic oscillations, as all of the parasitic capacitances and inductances are included in a ...

The presented high-voltage DC source was designed to enable laboratory measurements of reverse and forward characteristics in non-conducting state of power semiconductor components. It also enables to measure the minimum triggering current or control voltage in dependence of the voltage on main electrodes for SCR, triac or voltage-controlled semiconductor devices such as MOSFET and IGBT, respec...

SiC MOSFETs have an excellent characteristic of high switching speed, which can improve the efficiency and power density converters significantly. However, fast processes cause serious crosstalk problems in bridge-arm configurations, restricts devices’ performances. This paper presents a detailed accurate improved analytical model, takes into account nonlinear capacitances, parasitic inductance...

A DFE often consumes a large portion of the receiver power budget due to the fast settling time needed at the DFE summing node where ISI cancellation occurs. In a typical analog current summer (Fig. 12.5.1, top), a dominant RC time-constant is formed by the load resistance and wiring and parasitic capacitances from the input stage, feedback taps, and slicer. The time constant for settling can b...

Abstract We have developed new cavity structure GaAs FETs with high humidity resistance. The cavity is formed by sealing up with air bridges and polymers around the FETs and covering the surface of the polymers with thick SiN films. As the cavities formed by the newly-developed process are completely airfilled, the high frequency characteristics of FETs are unaffected by the parasitic capacitan...

This article presents selected methods of limiting the bearing voltages synchronous machines with permanent magnets supplied from power electronic converters. The authors analyzed based on use various shielding windings placed in slot wedges and mounted stator end-winding region. values parasitic capacitances machine, which levels depend, were determined using finite element method. Three-dimen...