This paper presents a study of Active inductor based VCOs that helps in increasing the tuning range of the VCO , reduces the chip size and phase noise of the circuit. Study has been done on LC VCOs by replacing the passive inductors with the active one consisting of MOSFET. Design of circuit has been done on Orcade Capture using .18um technology.power consumption of circuit is 1.33mW with tunin...

Abstract: This paper presents scaling of Floating-Gate (FG) devices, and the resulting implication to large-scale Field Programmable Analog Arrays (FPAA) systems. The properties of FG circuits and systems in one technology (e.g., 350 nm CMOS) are experimentally shown to roughly translate to FG circuits in scaled down processes in a way predictable through MOSFET physics concepts. Scaling FG dev...

The benefits of soft-switching converters, and in particular zero-voltage switching (ZVS, also called zerovoltage-transition [ZVT] or resonant-transition) circuits, are well-known. High-frequency converters powered from high source voltage show significant improvements when operated with soft switching. These improvements are 1) reduced switching losses, which allow high switching frequency and...

Simulation results on a novel extended p dual source SOI MOSFET are reported. It is shown that the presence of the extended p region on the source side, which can be fabricated using the post-low-energy implanting selective epitaxy (PLISE), significantly suppresses the parasitic bipolar transistor action resulting in a large improvement in the breakdown voltage. Our results show that when the l...

Insertion of a dc-dc converter between the automobile battery and electrical loads is proposed. This would allow gradual conversion to higher battery voltage, regulation of dc distribution voltage, and multiple distribution voltage levels. Switching loss arising from parasitic inductances is a serious problem in this application. The nonlinear resonant switch can remove this source of loss, ach...

We present the design and simulation of a single-walled carbon nanotube(SWCNT)-based field-effect transistor (FET) using Silvaco TCAD. In this paper, theself-heating effect modeling of the CNT MOSFET structure is performed and comparedwith conventional MOSFET structure having same channel length. The numericalresults are presented to show the self-heating effect on the I...

This article characterizes three parasitic capacitances in copper-foiled medium-voltage inductors. It is found that the conventional modeling method overlooks effect of fringe field, which leads to inaccurate To address this problem, contributed by electrical field identified first, and a physics-based analytical for proposed, avoids using any empirical equations. The total are then derived dif...