This paper presents a novel analytical loss formulation to predict the efficiency of three-phase inverters using silicon carbide (SiC) metal—oxide—semiconductor field-effect transistors (MOSFETs). The proposed accounts for influence output current harmonic distortion on conduction losses as well impact parasitic capacitances and deadtime switching losses. are formulated in balanced conditions s...

<span>Propagation delays and couplings between nearby lines affect the circuit performances (speed, power consumption) operations. Propagation in longer can become critical compared to clock frequency induce unwanted signals neighboring ("crosstalk" phenomenon). Induced line capacitances parasitic signals. Hence characterizing of these is paramount importance. The present work deals with ...

The potential impact of high permittivity gate dielectrics on device short channel and circuit performance is studied over a wide range of dielectric permittivities ( gate) using two-dimensional (2-D) device and Monte Carlo simulations. The gate-to-channel capacitance and parasitic fringe capacitances are extracted using a highly accurate three-dimensional (3-D) capacitance extractor. It is obs...

In this paper is shown a new way to use Magneto-Dielectric Materials (MDM) in order miniaturize monopole antennas. It proposed load an antenna with MDM the relative permeability achieve first 17% miniaturization rate. Then, better miniaturization, it add metal parasitic plates on both sides of material permittivity ensure capacitance useful shift antenna’s resonant frequency. By combining loadi...

All prior reports of long-term 500 °C operation SiC JFET-R ICs have noted the existence an initial “burn-in” period changes in measured electrical characteristics for first few hundred hours oven-testing. This work measurements “burn-in parasitic MOSFET conduction” that can substantially impact performance some circuits during heat-up JFET ICs, but then subsequently disappears after a at °C. Th...

Inter-terminal capacitances (ITCs) have major influence on the dynamic performance of power SiC MOSFETs. Knowledge exact values for ITCs is required in order to perform accurate and predictive compact model simulations their performance. Since commercial MOSFETs are capable operating a wide range temperatures, it important know whole temperature operation. Direct measurements with standard equi...

In modern electric vehicles, electrical failure has become a critical problem that reduces the lifetime of traction motors. Moreover, motors with high-voltage and high-speed systems for high power density have been aggravating shaft voltage problems. This study identifies direct-oil-cooling exacerbate this problem. To address this, an analytical method calculating parasitic capacitance is propo...

Abstract Failures of machine elements can cause critical breakdowns, e.g. bearing damage accounts for almost 20% all failures. Hence, monitoring is particular importance condition gearboxes. Therefore, new approaches based on electrical impedance analysis are proposed in literature, the measurement rolling load or with so-called sensory utilizable (SuME). For this approach, an signal transmitte...