In this paper, the Ni Schottky barrier on GaN epilayer grown free standing substrates has been characterized. First, transmission electrical microscopy (TEM) images and nanoscale analysis by conductive atomic force (C-AFM) of bare material allowed visualizing structural defects in crystal, as well local inhomogeneities current conduction. The forward current-voltage (I-V) characteristics Ni/GaN...

This paper presents the comprehensive performance analysis of thermionic power generation when interelectrode vacuum gap shrinks to submicron range. Although reducing has been suggested as an effective approach mitigate space-charge accumulation in thermionic-energy-conversion (TEC) devices, previous theoretical works have predicted optimal distance single-digit micrometer However, we demonstra...

Abstract In this paper, we investigate the electrical evolution of tungsten (W) and carbide (WC) Schottky contacts on 4H-SiC subjected to thermal treatments at different annealing temperatures from 475 °C 700 °C. For each temperature, uniformity barrier height (Φ B ) ideality factor ( n was monitored by current–voltage I – V measurements in forward bias, performed over sets equivalent diodes. G...

Whisker contacted GaAs Schottky barrier diodes are the standard devices for mixing and multiplier applications in the THz frequency range. With the decreasing size of Schottky diodes for operation at higher frequencies, the reliability and the physical understanding of the Schottky barrier becomes increasingly important. In this contribution, we present new results concerning the reliability of...

We present results for hydrodynamic simulations of pseudomorphic AlGaAs/InGaAs/GaAs High Electron Mobility Transistors (HEMTs) obtained by the two-dimensional device simulator MINIMOS-NT. The concise analysis of industrially relevant HEMT power devices of two different foundries for gate-lengths between lg = 140 nm and lg = 300 nm is carried out. Several aspects, including thermal and breakdown...

The retrosection theorem says that any hyperbolic or Riemann surface can be uniformized by a Schottky group. We generalize this theorem to the case of hyperbolic 2-orbifolds by giving necessary and sufficient conditions for a hyperbolic 2-orbifold, in terms of its signature, to admit a uniformization by a Kleinian group which is a finite extension of a Schottky group. Equivalent^, the condition...

The mechanism responsible of the Schottky barrier formation is anaiysed by considering a monolayer deposition of Li. Na or K on GaAs(ll0). These cases are studied by means of a free parameter consistent molecular orbital method. Che~so~tion energies. adsorption sites and Schottky barrier heights are calculated and found to be in good agreement with the experimental evidence. Our results tend to...

We investigate numerically the collision of nonlinear envelope pulses in composite rightand left-handed transmission lines with regularly spaced Schottky varactors. Because of the nonlinearity caused by the Schottky varactors, the dispersive distortion of envelope pulses is well compensated. We find that when two nonlinear envelope pulses traveling in the opposite directions collide, two envelo...

A higher detection performance and stability are always pursued in the development of photoelectric or photo-electrochemical devices, critical for their further commercial application. Here, we report a CsPbBr3-based photodetector engineered from multilayer Si/Ag islands/CsPbBr3/PMMA system, showing an evidently enhanced photosensitization breaking absorption edge CsPbBr3. On one hand, photocur...