نتایج جستجو برای: nanoscale schottky
تعداد نتایج: 27775 فیلتر نتایج به سال:
Templated nanoelectrodeposition on photoactive n-Si is introduced here for the customization of nanoscale inhomogeneous Schottky junctions. We demonstrate use these surfaces as photoanodes water dissociation.
The p-n junction cannot be implemented at the nanoscale because the doping is very often a detrimental effect. The doping could change dramatically the properties of a nanomaterial such as graphene or single-walled carbon nanotubes. Therefore, we will present two graphene diodes without a p-n junction. The first is based on the dissimilar metals having workfunction below and above the graphene ...
In this work, the transport properties of metal/3C-SiC interfaces were monitored employing a nanoscale characterization approach in combination with conventional electrical measurements. In particular, using conductive atomic force microscopy allowed demonstrating that the stacking fault is the most pervasive, electrically active extended defect at 3C-SiC(111) surfaces, and it can be electrical...
In this study we measured the degrees to which the Schottky barrier heights (SBHs) are lowered in ZnO nanowire (NW) devices under illumination with UV light. We measured the I-V characteristics of ZnO nanowire devices to confirm that ZnO is an n-type semiconductor and that the on/off ratio is approximately 10(4). From temperature-dependent I-V measurements we obtained a SBH of 0.661 eV for a Zn...
The move from planar CMOS-based microelectronics and advanced device structures like FinFETs and FD SOI structures to devices with 1-dimensional nanostructures (Si, Ge, III-V semiconductors) requires fundamental studies of nanostructures and innovative approaches to integrate the new materials and structures into microelectronic products. The approach of nanowire-devices for reconfigurable fiel...
We have derived a general formula describing current noise in multimode ballistic channels connecting source and drain electrodes with Fermi electron gas. In particular ~at eV@kBT), the expression describes the nonequilibrium ‘‘shot’’ noise, which may be suppressed by both Fermi correlations and space charge screening. The general formula has been applied to an approximate model of a two-dimens...
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