نتایج جستجو برای: nanoscale schottky

تعداد نتایج: 27775  

Journal: :IEEE Transactions on Electron Devices 2007

Journal: :Nanoscale 2021

Templated nanoelectrodeposition on photoactive n-Si is introduced here for the customization of nanoscale inhomogeneous Schottky junctions. We demonstrate use these surfaces as photoanodes water dissociation.

2014
Mircea DRAGOMAN

The p-n junction cannot be implemented at the nanoscale because the doping is very often a detrimental effect. The doping could change dramatically the properties of a nanomaterial such as graphene or single-walled carbon nanotubes. Therefore, we will present two graphene diodes without a p-n junction. The first is based on the dissimilar metals having workfunction below and above the graphene ...

2011
Jens Eriksson Fabrizio Roccaforte Sergey Reshanov Stefano Leone Filippo Giannazzo Raffaella LoNigro Patrick Fiorenza Vito Raineri

In this work, the transport properties of metal/3C-SiC interfaces were monitored employing a nanoscale characterization approach in combination with conventional electrical measurements. In particular, using conductive atomic force microscopy allowed demonstrating that the stacking fault is the most pervasive, electrically active extended defect at 3C-SiC(111) surfaces, and it can be electrical...

2015
Ming-Yen Lu Ming-Pei Lu Shuen-Jium You Chieh-Wei Chen Ying-Jhe Wang

In this study we measured the degrees to which the Schottky barrier heights (SBHs) are lowered in ZnO nanowire (NW) devices under illumination with UV light. We measured the I-V characteristics of ZnO nanowire devices to confirm that ZnO is an n-type semiconductor and that the on/off ratio is approximately 10(4). From temperature-dependent I-V measurements we obtained a SBH of 0.661 eV for a Zn...

2014
Markus Löffler Sayanti Banerjee Jens Trommer Andre Heinzig Walter Weber Ehrenfried Zschech

The move from planar CMOS-based microelectronics and advanced device structures like FinFETs and FD SOI structures to devices with 1-dimensional nanostructures (Si, Ge, III-V semiconductors) requires fundamental studies of nanostructures and innovative approaches to integrate the new materials and structures into microelectronic products. The approach of nanowire-devices for reconfigurable fiel...

1999
Y. Naveh A. N. Korotkov K. K. Likharev

We have derived a general formula describing current noise in multimode ballistic channels connecting source and drain electrodes with Fermi electron gas. In particular ~at eV@kBT), the expression describes the nonequilibrium ‘‘shot’’ noise, which may be suppressed by both Fermi correlations and space charge screening. The general formula has been applied to an approximate model of a two-dimens...

2009
Yu-Chih Tseng Vivek Subramanian Steven G. Louie Jeffrey Bokor

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