In this paper we report on experimental results in solving defect-related issues limiting the size and performance of 4H-SiC based power Schottky diodes. Several techniques improving wafer quality were used in line to fabricate power Schottky diodes with high current capability for blocking voltage over 600 V. Results of X-ray investigation of wafers on every step of treatment from initial wafe...

AbstructThe first coherent measurement of submillimeterwave sideband generator (SBG) output power is reported here. This SBG utilizes a submillimeter laser, microwave synthesizer, and high frequency Schottky diode to produce tunable radiation. Record efficiency and output power (10.5 pW) at a drive frequency of 1.6 THz has been obtained, and SBG radiation was efficiently separated from the lase...

We report the fabrication of low-leakage rectifying Pt and Au Schottky diodes and Au-gated metal-semiconductor field effect transistors (MESFETs) on n-type SrTiO3 thin films grown by hybrid molecular beam epitaxy. In agreement with previous studies, we find that compared to Pt, Au provides a higher Schottky barrier height with SrTiO3. As a result of the large dielectric constant of SrTiO3 and t...

The Schottky barrier heights of metal contacts, including WSi0.8, Cr, Ti, Pt, and Ni, on n-type gallium nitride GaN with a GaN cap layer grown at low-temperature LTG were studied. Higher barriers can be formed by introducing LTG GaN on top of the conventional structures. The higher Schottky barrier observed in samples with the LTG GaN cap layer may be due to the facts that the high-resistivity ...

In this article we give an overview over the physical mechanisms involved in the electronic transport in ultrathinbody SOI Schottky-barrier MOSFETs. A strong impact of the SOI and gate oxide thickness on the transistor characteristics is found and explained using experimental as well as simulated data. We elaborate on the influence of scattering in the channel and show that for a significant ba...

An electrochemical surface treatment has been developed that decreases the reverse-bias leakage current in Schottky diodes fabricated on GaN grown by molecular-beam epitaxy ~MBE!. This treatment suppresses current flow through localized leakage paths present in MBE-grown GaN, while leaving other diode characteristics, such as the Schottky barrier height, largely unaffected. A reduction in leaka...

We present a theoretical framework for the calculation of charge transport through nanowire-based Schottky-barrier field-effect transistors that is conceptually simple but still captures the relevant physical mechanisms of the transport process. Our approach combines two approaches on different length scales: (1) the finite element method is used to model realistic device geometries and to calc...

The scalability of thin-film transistors has been well documented, but there have been very few investigations into of the effects of device scalability in Schottky diodes. Indium-gallium-zinc-oxide (IGZO) Schottky diodes were fabricated with IGZO thicknesses of 50, 150 and 250 nm. Despite the same IGZO-Pt interface and Schottky barrier being formed in all devices, reducing the IGZO thickness c...

We have investigated the electrical and microstructural properties of Se Schottky contacts to n-type Si before and after rapid thermal annealing (RTA) at temperatures in the range of 100­200°C for 30 s under N2 ambient. The forward and reverse leakage currents increased with increasing RTA temperature following which the barrier heights decreased from 0.71 to 0.60 eV before and after annealing ...

The efficiencies of open-air processed Cu2O/Zn(1-x)Mg(x)O heterojunction solar cells are doubled by reducing the effect of the Schottky barrier between Zn(1-x)Mg(x)O and the indium tin oxide (ITO) top contact. By depositing Zn(1-x)Mg(x)O with a long band-tail, charge flows through the Zn(1-x)Mg(x)O/ITO Schottky barrier without rectification by hopping between the sub-bandgap states. High curren...