At the end of the ITRS, new materials, nanotechnologies and device architectures will be needed for nanoscale CMOS and beyond-CMOS. Silicon-on-insulator (SOI)-based devices are promising for the ultimate integration of electronic circuits on silicon [1]. We will discuss a number of key issues, including: the performance of singleand multi-gate thin film MOSFETs; the comparison between Si, Ge an...

the effect of chloride ions concentration on the electrochemical behavior of aisi 410 stainless steel in thesimulated concrete pore (0.1 m naoh + 0.1 m koh) solution was investigated by various electrochemicalmethods such as potentiodynamic polarization, mott–schottky analysis and electrochemical impedancespectroscopy (eis). potentiodynamic polarization curves revealed that increasing chloride ...

An approach for reducing reverse-bias leakage currents in Schottky contacts formed to nitride semiconductor heterostructures grown by molecular-beam epitaxy is described, demonstrated, and analyzed. By incorporation of a GaN cap layer atop a conventional AlxGa1−xN/GaN heterostructure field-effect transistor epitaxial layer structure, the direction of the electric field at the metal-semiconducto...

Not all Schottky groups of Möbius transformations are classical Schottky groups. In this paper we show that all Fuchsian Schottky groups are classical Schottky groups, but not necessarily on the same set of generators. AMS Classification 20H10; 30F35, 30F40

Abstract In this paper issues, associated with the development of THz direct detectors and focal plane arrays in last decade are discussed. After short description general classification detectors, more details concern Schottky barrier diodes, CMOS-based microbolometers, field-effect transistor where links between devices modern technologies such as micromachining underlined. Special attention ...

The goal of this paper is to describe a theoretical construction of an infinite collection of non-classical Schottky groups. We first show that there are infinitely many non-classical noded Schottky groups on the boundary of Schottky space, and we show that infinitely many of these are “sufficiently complicated”. We then show that every Schottky group in an appropriately defined relative conica...

Koebe’s Retrosection Theorem [8] states that every closed Riemann surface can be uniformized by a Schottky group. In [10] Marden showed that non-classical Schottky groups exist, and a first explicit example of a non-classical Schottky group was given by Yamamoto in [14]. Work on Schottky uniformizations of surfaces with certain symmetry has been done by people such as Hidalgo [7]. The natural q...

We demonstrate an efficient core-shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal-semiconductor-metal (MSM) radial architecture, in which built-in electric fields at the semiconductor heterointerface and at the metal/semiconductor Schottky contact promote photogenerated charge...

Semiconducting molybdenum disulfphide has emerged as an attractive material for novel nanoscale optoelectronic devices due to its reduced dimensionality and large direct bandgap. Since optoelectronic devices require electron-hole generation/recombination, it is important to be able to fabricate ambipolar transistors to investigate charge transport both in the conduction band and in the valence ...

In this paper, we present the main issues and the modelling approaches for the simulation of nanoscale MOSFETs in which transport is dominated by ballistic electrons. We show that is indeed possible to compute in an accurate way the density of states in the channel in the case of quantum confinement without solving the complete two-dimensional Schr€ odinger equation. We are developing modelling...