The ordered tin disulfide (SnS(2)) nanowire arrays were first fabricated by sulfurizing the Sn nanowires, which are embedded in the nanochannels of anodic aluminum oxide (AAO) template. SnS(2) nanowire arrays are highly ordered and highly dense. X-ray diffraction (XRD) and corresponding selected area electron diffraction (SAED) patterns demonstrate the SnS(2) nanowire is hexagonal polycrystalli...

We have synthesized three-dimensional self-assembled ZnO-based nanoscale heterostructures through the addition of alloying elements (In or Sn) during the vapor phase transport and condensation deposition process. Each threedimensional nanoscale heterostructure consists of a faceted nanowire core, with side branches (nanoribbons or nanorods) emanating from facets of the central nanowire core. Th...

Direct correlation of structural and optical properties on the nanoscale is essential for rational synthesis of nanomaterials with predefined structure and functionality. We study optical properties of single III-V nitride nanowire radial heterostructures with measured spatial resolution of <20 nm using cathodoluminescence (CL) technique coupled with scanning transmission electron microscopy (S...

In this paper, a very simple top-down fabrication method, which is compatible with standard silicon (Si) fabrication processes, is proposed to fabricate new suspended gold nanowire bridges with flexible designs. The electrical characteristics of the nanowire bridges which include the V–I curve, thermoresistive and impedance spectra change before and after nanowire bridges release and resistivit...

We have recently shown that dielectric/metal composite nanowires can exhibit very strong surface enhanced Raman (SERS) signals, when arranged in a random 3D geometry. Since we believe that the intersections of nanowires are critical in generating the high electric fields necessary for this enhancement, we are investigating this effect under more controlled conditions. Thus, we will discuss the ...

The growth of single crystal InAs nanowire arrays on crystalline and amorphous substrates is described. This method is quite simple and fast, and uses only a bare InAs substrate as a source and a gold colloid on the growth substrate. High quality InAs nanowires can be produced by this technique, with the nanowire diameter controllable by the gold colloid size and the nanowire length controlled ...

The development of display scan drivers is an essential step in the effort to develop transparent and flexible display devices based on nanowire transistors. Here we report a transparent nanowire-based shift register that functions as the standard logic circuit of a display scan driver. To form the shift register circuits using only n-type nanowire transistors, a novel circuit structure was int...

With the features of high mobility, a high electric on/off ratio and excellent transparency, metal oxide nanowires are excellent candidates for transparent thin-film transistors, which is one of the key technologies to realize transparent electronics. This article provides a comprehensive review of the state-of-the-art research activities that focus on transparent metal oxide nanowire transisto...

The defect formation energies of transition metals (Cr, Fe, and Ni) doped in the pseudo-H passivated ZnO nanowires and bulk are systematically investigated using first-principles methods. The general chemical trends of the nanowires are similar to those of the bulk. We also show that the formation energy increases as the diameter of the nanowire decreases, indicating that the doping of magnetic...

Arrays of gold nanowires formed by the process of lithographically patterned nanowire electrodeposition (LPNE) were characterized by a combination of SEM, polarized UV-visible absorption spectroscopy and optical diffraction measurements. A transverse localized surface plasmon resonance (LSPR) was observed for gold nanowire arrays with an absorption maximum (λ(max)) that varied with nanowire wid...