Amorphous films of Nb2O5 composition were deposited by thermal atomic layer deposition on (001) Si substrates and subsequently crystallized annealing in forming gas at temperatures ranging from 550 °C to 1000 °C. After subjecting these an 850 anneal, cross-sectional transmission electron microscopy revealed the presence B-Nb2O5 T-Nb2O5 phases matrix, as well reduced R-NbO2 floret-shaped regions...

Sr5Nb4O15 – Nb2O5 nanocomposites were synthesized in 2 and 4 M KOH aqueous solutions, via a non-stoichiometric 1:2 Sr:Nb molar ratio hydrothermal method at 160°C for 48 h (S1 and S2, respectively). Sr(NO3)2 and Nb2O5 were used as raw materials. The synthesized nanomaterials were characterized by powder X-Ray diffraction (PXRD) technique. It was found that Sr5Nb4O15 has been crystallized in hexa...

Automotive windshield represents a large volume of solid waste due to limited recycling. Glass-ceramics were produced from discarded windshields with Nb2O5 as nucleating agent at concentrations 0, 5, 10, and 15 wt% 700 800 °C sintering temperatures. Mechanical electrical characterizations glass-ceramics performed. Equibiaxial flexural strength was performed related porosity. At °C, favors the m...

Thin Nb2O5 anodic films ( 20 nm thick) grown in phosphoric acid solution have been characterised by EIS and differential admittance study in a large range of potential and frequency. The overall electrical behaviour has been interpreted by means of the theory of amorphous semiconductor Schottky barrier in presence of a non-constant density of states (DOS). A comparison of DOS for films grown in...

Herein we show that heating 2D Ti3C2 in air results in TiO2 nanocrystals enmeshed in thin sheets of disordered graphitic carbon structures that can handle extremely high cycling rates when tested as anodes in lithium ion batteries. Oxidation of 2D Ti3C2 in either CO2 or pressurized water also resulted in TiO2-C hybrid structures. Similarly, other hybrids can be produced, as we show here for Nb2...

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An analysis of the electronic properties of amorphous semiconductor–electrolyte junction is reported for thin (Dox < 20 nm) passive film grown on Nb in acidic electrolyte. It will be shown that the theory of amorphous semiconductor–electrolyte junction (a-SC/El) both in the low band-bending and high band-bending regime is able to explain the admittance data of a-Nb2O5/El interface in a large ra...