نتایج جستجو برای: porous silicon (ps)
تعداد نتایج: 151519 فیلتر نتایج به سال:
Porous Silicon (PS) layers have been prepared from p-type silicon wafers of (100) orientation. SEM, XRD, FTIR and PL studies were done to characterize the surface morphological and optical properties of PS. The porosity of the PS samples was determined using the parameters obtained from SEM images by geometric method. The refractive index values of the PS samples as a function of poros...
Porous Silicon (PS) layers have been prepared from p-type silicon wafers of (100) orientation. SEM, XRD, FTIR and PL studies were done to characterize the surface morphological and optical properties of PS. The porosity of the PS samples was determined using the parameters obtained from SEM images by geometric method. The refractive index values of the PS samples as a function of poros...
Porous silicon layers have been prepared from n-type silicon wafers of (100) orientation. SEM, FTIR and PL have been used to characterize the morphological and optical properties of porous silicon. The influence of varying etching time in the anodizing solution, on structural and optical properties of porous silicon has been investigated. It is observed that pore size increases with etching tim...
porous silicon layers have been prepared from n-type silicon wafers of (100) orientation. sem, ftir and pl have been used to characterize the morphological and optical properties of porous silicon. the influence of varying etching time in the anodizing solution, on structural and optical properties of porous silicon has been investigated. it is observed that pore size increases with etching tim...
Porous silicon (PS) layers come into existance as a result of electrochemical anodization on silicon. Although a great deal of research has been done on the formation and optical properties of this material, the exact mechanism involved is not well-understood yet. In this article, first, the optical properties of silicon and porous silicon are described. Then, previous research and the prop...
Porous silicon (PS) samples are obtained by electrochemical anodization of Si wafers in HF+DMF solution. The hydrogen complex components are formed on the inner surface walls of porous silicon. In this work the depth profile of porous silicon is estimated by measurement of hydrogen content in the depth of the sample. Since the well-known ion beam analysis simulation programs are inappropriate f...
porous silicon samples were prepared by electrochemical etching method for different etching times. the structural properties of porous silicon (ps) samples were determined from the atomic force microscopy (afm) measurements. the surface mean root square roughness (σ rms) changes as function of porosity were studied, and the influence of etching time on porosity and roughness was studied too. u...
In this paper, formation of a nanostructure semi transparence fluoride tin oxides (FTO) by spray pyrolysis technique on porous silicon PS layer. Porous silicon PS layer was prepared by anodization of p-type silicon wafers to fabricate of the UVVisible Fluoride-doped tin oxide /Porous silicon /p-Si heterojunction photodetector. Optical properties of FTO thin films were measured. The optical band...
Porous silicon samples were prepared by electrochemical etching method for different etching times. The structural properties of porous silicon (PS) samples were determined from the Atomic Force Microscopy (AFM) measurements. The surface mean root square roughness (σ rms) changes as function of porosity were studied, and the influence of etching time on porosity and roughness was studied too. U...
Mirage effect is contactless and non destructive method which has been used a lot to determine thermal properties of different kind of samples , transverse photothermal deflection PTD in skimming configuration with ccd camera and special programs is used to determine thermal conductivity of porous silicon ps film. Ps samples were prepared by electrochemical etching. Thermal conductivity wit...
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