In this paper, we have developed an explicit analytical drain current model comprising surface channel potential and threshold voltage in order to explain the advantages of the proposed Gate Stack Double Diffusion (GSDD) MOSFET design over the conventional MOSFET with the same geometric specifications that allow us to use the benefits of the incorporation of the high-k layer between the oxide l...

The GaN materials system has established itself as being very important for the next generation of high-power density devices for optical, microwave, and radar applications [1] [2] [3] [4] [5]. At the same time, performance of these devices has been limited by self-heating [1] [6]. Thus, accurate modeling of heat diffusion and self-heating effects in AlGaN/GaN heterostructures and device optimi...

A testing strategy for the classification of self-heating substances for transport of dangerous goods is proposed. The strategy was developed based on the tests described and correlations used in the UN Recommendations. It was demonstrated that the value of activation energy of the exothermic reaction has a significant impact on the extrapolation of test results with regard to different contain...

This paper presents the electrothermal simulation of integrated thin film resistors. Both the thermal and electrical problem is tackled by a semi-analytical method, without the need of generating an equivalent distributed network. As the electrical conductivity is temperature dependent, self-heating of the resistor will alterate the current distribution, leading to a non-uniform power dissipati...

In this paper, we have proposed a novel FinFET with extended body under the poly gate, which is called EB-FinFET, and its characteristic is demonstrated by using three-dimensional (3-D) numerical simulation. We have analyzed and compared it with conventional FinFET. The extended body height dependence on the drain induced barrier lowering (DIBL) and subthreshold swing (S.S) have been also inves...

The buried-oxide in SOI MOSFET inhibits heat dissipation in the Si film and leads to increase in transistor temperature. This paper reports a simple and accurate characterization method for the self-heating effect (SHE) in SOI MOSFET. The ac output conductance at a chosen bias point is measured at several frequencies to determine the thermal resistance ( ) and thermal capacitance ( ) associated...

Electron transport and self-heating effects are investigated in metal-insulator field-effect transistors with a single InAs nanowire channel, using a three-dimensional electrothermal Monte Carlo simulator based on finite-element meshing. The model, coupling an ensemble Monte Carlo simulation with the solution of the heat diffusion equation, is carefully calibrated with data from experimental wo...

This work aimed to investigate the impact of highest treatment temperature (HTT), heating rate, carrier gas flow rate and feedstock on the composition and energy content of pyrolysis gas to assess whether a self-sustained system could be achieved through the combustion of the gas fraction alone, leaving other co-products available for alternative high-value uses. Calculations based on gas compo...

Because of the interaction between self-heating and hot carriers effects, neither isothermal nor conventional macrothermal models are adequate for the simulation of state-of-the-art power devices; instead, a detailed electro-thermal model accounting for nonstationary transport, such as the Thermal-Fully Hydrodynamic (T-FH) model, is required. We apply a one-dimensional (1-D) implementation of s...