With the ever-increasing demands for integration of advanced electronic functions into large-area electronics, down-scaling of thin-film transistors (TFTs) becomes very necessary. The key device operational issues associated with TFT scaling, including short-channel effects (SCEs) and self-heating, are considered in this paper. Device structure engineering approaches are introduced to suppress ...

The relationship of the biasing condition and the self-heating effect of a multi-channel metallic oxide semiconductor field effect transistor (MOSFET) device was examined using various channel currents ranging from triode to saturation regimes. When temperature non-uniformity is generated due to transistor self-heating, the local thermal resistance is conventionally defined through the differen...

I present a novel view on the problem of solar coronal heating. In my picture, coronal heating should be viewed as a self-regulating process that works to keep the coronal plasma marginally collisionless. The self-regulating mechanism is based on the interplay between two effects: (1) Plasma density controls coronal energy release via the transition between the slow collisional Sweet-Parker reg...

As MOS Transistors channel length continues to scale beyond 90nm, classical drift-diffusion model for carrier transport of such type of devices is not valid. For these dimensions of Transistors QuasiBallistic/ Ballistic transport phenomena occur and a new mobility model is required to predict electrical behavior of these devices perfectly. Selfheating is also one the importance critical problem...