This report describes a man versus man semiconductor laser weapon fire simulation system that eliminates the requirement that the trainee wear on his body numerous laser detectors that impede his motion and are subject to damage. The system utilizes retroreflective material and two transmitted eyesafe laser beams. The first beam, when reflected, ascertains a hit and the second broad beam commun...

A diode-end-pumped passively mode-locked femtosecond Tm-doped calcium lithium niobium gallium garnet (Tm:CLNGG) disordered crystal laser was demonstrated for the first time to our knowledge. With a 790 nm laser diode pumping, stable CW mode-locking operation was obtained by using a semiconductor saturable absorber mirror. The disordered crystal laser generated mode-locked pulses as short as 479...

An optically injected semiconductor laser can produce excitable multipulses. Homoclinic bifurcation curves confine experimentally accessible regions in parameter space where the laser emits a certain number of pulses after being triggered from its steady state by a single perturbation. This phenomenon is organized by a generic codimension-two homoclinic bifurcation and should also be observable...

We studied anticorrelated quantum fluctuations between the TEM(00) and the TEM(01) transverse modes of a vertical-cavity surface-emitting semiconductor laser by measuring the transverse spatial distribution of the laser beam intensity noise. Our experimental results are found to be in good agreement with the predictions of a phenomenological model that accounts for quantum correlations between ...

The dynamical properties of dispersive optical bistability in a semiconductor laser biased from below to above threshold are investigated both experimentally and theoretically. The optical bistability switch-off time is found to decrease continuously from below to above threshold. A fast switch-off in less than 100 ps has been observed when the laser operates in the injection-locked condition.

The first monolithically integrated widely tunable wavelength converter, consisting of a Sampled-Grating Distributed-Bragg-Reflector laser and a semiconductor optical amplifier-based Mach-Zehnder interferometer, is reported. Static extinction ratios better than 19dB and 13 dB using electrical and optical control, respectively, were measured over a 22nm laser wavelength range.

We study analytically and numerically a delay differential model of a passively modelocked semiconductor laser subjected to a single frequency coherent injection. The width of the locking cone is calculated asymptotically in the limit of small injection and compared to that obtained by direct numerical integration of the model equations. The dependence of the locking cone on the laser parameter...

We study numerically the response of a semiconductor laser to a small current modulation added to the dc-bias current. The laser is subjected to either optical feedback from an external reflector or optical injection from another laser. We characterize the nonlinear amplification near the Hopf bifurcation leading to the onset of undamped relaxation oscillations. © 2004 Optical Society of Americ...

We report on the experimental observation of coherence enhancement of noise-induced intermittency in a semiconductor laser subject to optical injection from another laser at the boundary of the frequency-locking regime. The intermittent switches between locked and unlocked states occur more regularly at a certain value of the injecting laser pump current. A shape of probability distribution of ...

We demonstrate the generation of 68 fs secant hyperbolic pulses at a 105 MHz repetition rate with an average power of 520 mW from a diode-pumped Yb(3+):CaGdAlO(4) mode-locked laser. A semiconductor saturable absorber allows passive mode locking, and a 15 W diode laser is used to pump directly the crystal. To our knowledge this represents the highest average power ever obtained for a sub-100 fs ...