This paper elaborates on several important outstanding issues in the state-of-art of overvoltage protection selection for modern wind farms. The lack of experience with this still-new technology, together with the inherent complexity of wind farm electrical systems, entails several unresolved issues pertinent to the topic of overvoltage protection, particularly in relation to lightning-initiate...

As non-controllable power sources, photovoltaics (PV) can create overvoltage in low voltage (LV) distribution feeders during periods of high generation and low load. This is usually prevented passively by limiting the penetration level of PV to very conservative values, even if the critical periods rarely occur. Alternatively, one can use active power curtailment (APC) techniques, reducing the ...

This paper studies the effect of new suggested ferroresonance limiter on controlling ferroresonance oscillations in the power transformer. It is expected that this limiter generally can control the ferroresonance. For studying these phenomena, at first ferroresonance is introduced and a general modeling approach is given. A simple case of ferroresonance in a three phase transformer is used to i...

This paper describes the possibilities for mathematical modelling of gap-less surge arresters in the simulation software DYNAST. This tool does not belong to standard modelling softwares in the field of electric power engineering. However, it may provide some key advantages when compared to more frequently used software such as EMTP-ATP and MATLAB-Simulink. Description of the metal oxide varist...

Self-organization of filaments in dielectric-barrier discharges (DBDs) probably has many origins. However, the dominant cause is proposed to be the accumulation of charge on the surfaces of the bounding dielectrics that reinforces successive discharge pulses to occur at the same locations. A secondary cause is the electrostatic repulsion of individual plasma filaments. Self-organization typical...

Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, material composition, architecture physics many GaN significantly different from silicon carbide devices. These distinctions result in unique stability, reliability robustness issues facing This paper reviews current understanding these issues, particularly those...