The design of tunable operational transconductance amplifier with wide linear range has become increasingly challenging with the scaling in the power supply voltage. Use of control voltage for the purpose of tunning often results in narrow linear range. In recent years the use of voltage as a control parameter has even become more difficult with the reduced supply voltage environment. In this p...

This paper describes a new electronically tunable three inputs and single output voltage-mode universal biquadratic filter based on simple CMOS operational transconductance amplifiers (OTAs) and grounded capacitors. The proposed configuration provides lowpass, highpass, bandpass, bandstop and allpass voltage responses at a high impedance input terminal, which enable easy cascadability. Addition...

The High Electron Mobility Transistor (HEMT) is a small geometry hetero-junction device that exploits the high electron mobility in an undoped region to achieve high speed operation. Hetero-junction is used to create a narrow undoped electron well which forms the channel for current flow. The electron mobility in the channel is found to be maximum due to the adequate presence of Indium quantity...

A compact OTA suitable for low-voltage active-RC and MOSFET-C filters is presented. The input stage of the OTA utilises the NMOS pseudo-differential amplifier with PMOS active load. The output stage relies upon the dual-mode feed-forward class-AB technique (based on an inverter-type transconductor) with common-mode rejection capability that incurs no penalty on transconductance/bias-current eff...

Current-mode (CM) and voltage-mode (VM) multiphase sinusoidal oscillator (MSO) structures using current backward transconductance amplifier (CBTA) are proposed. The proposed oscillators can generate n current or voltage signals (n being even or odd) equally spaced in phase. n+1 CBTAs, n grounded capacitor and a grounded resistor are used for nth-state oscillator. The oscillation frequency can b...

A new design methodology based on a unified treatment of all the regions of operation of the MOS transistor is proposed. It is intended for the design of CMOS analog circuits and especially suited for low power circuits where the moderate inversion region often is used because it provides a good compromise between speed and power consumption. The synthesis procedure is based on the relation bet...

We report on detailed room-temperature transport properties of a 17 nm thick double-gate silicon-on-insulator (DGSOI) transistor. We find that when the electron gas is transferred between the top and the bottom of the silicon-on-insulator (SOI) layer by changing the gate bias symmetry (i.e., applying the gate biases in a push–pull fashion), while keeping the carrier density constant the maximum...

This paper describes the conception of the current follower transconductance amplifier (CFTA) with electronically and linearly current tunable. The newly modified element is realized based on the use of transconductance cells (G(m)s) as core circuits. The advantage of this element is that the current transfer ratios (i(z)/i(p) and i(x)/i(z)) can be tuned electronically and linearly by adjusting...

A novel method that reveals the spatial distribution of border traps in III-V MOSFETs is presented. The increase in transconductance with frequency is explored in a very wide frequency range (1Hz to 70 GHz) and a distributed RC network is used to model the oxide and trap capacitances. An evaluation of vertical InAs nanowire MOSFETs and surface-channel InGaAs MOSFETs with Al2O3/HfO2 high-κ gate ...

This paper presents a second order voltage mode quadrature sinusoidal oscillator using a recently reported active building block, namely the differential voltage current controlled conveyor transconductance amplifier. The circuit proposed here employs single differential voltage current controlled conveyor transconductance amplifier, two grounded resistors and two grounded capacitors. The use o...