This paper presents a modular technique for transconductance reduction of a sub-threshold transconductor. This technique employs an ordinary differential pair circuit as a module to build a linear attenuator and to be the main transconductor. By applying the linear attenuation, the input linear range expansion and transconductance reduction are simultaneously achieved by sacrificing around 33% ...

This paper proposes a novel sinusoidal oscillator using a current differencing transconductance amplifier (CDTA) and four passive components. The proposed oscillator provides independent control of the oscillation frequency by using a resistor without disturbing the oscillation condition, and exhibits desirable active and passive sensitivities. This study proposes an improved topology using a c...

We fabricated 70 nm Al₂O₃ gated field effect transistors based on two-dimensional (2D) materials and characterized their optical and electrical properties. Studies show that the optical contrast of monolayer graphene on an Al₂O₃/Si substrate is superior to that on a traditional 300 nm SiO₂/Si substrate (2.4 times). Significantly, the transconductance of monolayer graphene transistors on the Al₂...

This paper presents ultra-low voltage transconductor using a new bulk-driven quasi-°oatinggate technique (BD-QFG). This technique leads to signi ̄cant increase in the transconductance and the bandwidth values of the MOS transistor (MOST) under ultra-low voltage condition. The proposed CMOS structure of the transconductor is capable to work with ultra-low supply voltage of 300mV and low power con...

Single-ended and differential operational transconductance amplifier (OTA) configurations are biased with MOSFET interface-trap charge-pumping (ITCP) current generators to achieve very low transconductances for tunable sub-hertz operational transconductance amplifier-capacitor (OTA-C) filter implementation. This paper reviews the basics of ITCP current generation and presents the transconductor...

High-performance inversion-type enhancement-mod nchannel In0.53Ga0.47As MOSFETs with atomic layer deposited (ALD) Al2O3, HfO2, and HfAlO as gate dielectrics are demonstrated. The ALD process on III-V compound semiconductors enables the formation of high-quality gate oxides and unpinning of Fermi level on III-V in general. A 0.5-μm gate-length MOSFET with an Al2O3 gate oxide thickness of 8 nm sh...

Pentacene-based organic thin-film transistors (OTFTs) were fabricated on several types of flexible substrate: commercial photo paper, ultra-smooth specialty paper and ultra-thin (100 μM) flexible glass. The transistors were fabricated entirely through dry-step processing. The transconductance and field-effect mobility of OTFTs on photo paper reached values of ∼0.52 mS m(-1) and ∼ 0.1 cm(2) V (-...

Abstract. This paper proposes admittance matrix models to approach the behavior of six modern multiport functional blocks called: differential difference amplifier, differential difference operational floating amplifier, differential difference operational mirror amplifier, differential difference current conveyor, current backward transconductance amplifier and current differencing transconduc...

The paper describes the design for testability (DFT) of low voltage two stage operational transconductance amplifiers based on oscillation based testing (OBT). The oscillation-test strategy is a low cost and robust test method for mixed-signal integrated circuits. Being a vectorless test method, it allows one to eliminate the analog test vector generator. Circuit under test is transformed to os...