In order to investigate the nature of defects produced by ion irradiation through a heterostructure, a silicon-on-insulator substrate with a buried SiO2 layer at a depth of ;1.5 mm was irradiated. The implantation was done using 2 MeV Si ions in the dose range of 0.2– 1310 cm. The subsequent defect analysis was performed using the Au labeling technique. Besides the presence of an expected exces...

Defect depth profiles for self ion and He Irradiated gold arc obtained from single and multiple scatter dechanneling analysis in single crystal gold films. Quantitative defect densities are obtained through use of atomic scattering cross sections. Integral damage profiles are extracted from the dechanneling spectra and subsequently differentiated to yield the volume concentration of defects as ...

Despite the unique occurrences of structural defects in graphene synthesis, the fracture mechanism of a defective graphene sheet has not been fully understood due to the complexities of the defects. In this study, the fracture mechanism of the monolayer graphene with four common types of defects (single vacancy defect, divacancy defect, Stone-Wales defect and line vacancy defect) were investiga...

We report first-principles total-energy density-functional theory electronic structure calculations for the neutral and charge states of H intrinsic ~Frenkel pair! and extrinsic ~H vacancy or interstitial! point defects in KH2PO4. The relaxed atomic structures, the formation energy, the ionization energy, and electron and hole affinities for the various defects have been calculated. For the Fre...

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Energetic ions have been widely used to evaluate the irradiation tolerance of structural materials for nuclear power applications and to modify material properties. It is important to understand the defect production, annihilation and migration mechanisms during and after collision cascades. In this study, single crystalline pure nickel metal and single-phase concentrated solid solution alloys ...

Closed end ~10, 10! single walled carbon nanotubes ~SWNTs! have been opened by oxidation at their ends and at wall defect sites, using ozone. Oxidation with ozone, followed by heating to 973 K to liberate CO and CO2, causes etching of the nanotube surface at carbon atom vacancy defect sites. The rate of adsorption of Xe has been carefully measured as a function of the degree of nanotube etching...

Recent first-principles studies of point defects in ZnO are reviewed with a focus on native defects. Key properties of defects, such as formation energies, donor and acceptor levels, optical transition energies, migration energies and atomic and electronic structure, have been evaluated using various approaches including the local density approximation (LDA) and generalized gradient approximati...