Abstract: In this study, a novel, non-isolated, cascade-type, single-switch, high step-up DC/DC converter was developed for green energy systems. An integrated coupled inductor and voltage lift circuit were applied to simplify the converter structure and satisfy the requirements of high efficiency and high voltage gain ratios. In addition, the proposed structure is controllable with a single sw...

We generate and study electroosmotic shear flow in microchannels. By chemically or electrically modifying the surface potential of the channel walls a shear flow component with controllable velocity gradient can be added to the electroosmotic flow caused by double layer effects at the channel walls. Chemical modification is obtained by treating the channel wall with a cationic polymer. In case ...

Residual stress analysis was performed on thick, 1–25 lm, depleted uranium (DU) films deposited on an Al substrate by magnetron sputtering. Two distinct characterization techniques were used to measure substrate curvature before and after deposition. Stress evaluation was performed using the Benabdi/Roche equation, which is based on beam theory of a bi-layer material. The residual stress evolut...

This paper reports on an extensive investigation of the gate stability of GaN-based High Electron Mobility Transistors with p-type gate submitted to forward gate stress. Based on combined electrical and electroluminescence measurements, we demonstrate the following results: (i) the catastrophic breakdown voltage of the gate diode is higher than 11 V at room temperature; (ii) in a step-stress ex...

Stress is known to trigger seizures in patients with epilepsy, highlighting the physiological stress response as a possible therapeutic target for epilepsy treatment. Nevertheless, little is currently known about how a genetic predisposition to epilepsy interacts with the stress response to influence seizure outcome. To address this question, we examined the effect of acute stress on seizure ou...

Continuous-wave green laser-crystallized (CLC) single-grain-like polycrystalline silicon n-channel thinfilm transistors (poly-Si n-TFTs) demonstrate the higher electron mobility and turn-on current than excimer laser annealing (ELA) poly-Si n-TFTs. Furthermore, high drain voltage accelerates the flowing electrons in n-type channel, and hence the hot-carriers possibly cause a serious damage near...

AlGaN/GaN High Electron Mobility Transistors (HEMTs) with various gate lengths have been stepstressed under both onand off-state conditions. On-state, high power stress tests were performed on 0.17 lm gate length HEMTs and a single 5 lm spaced TLM pattern. Significant degradation of the submicron HEMTs as compared to the excellent stability of the TLM patterns under the same stress conditions r...

The static pull-in instability of beam-type micro-electromechanical systems is theoretically investigated. Two engineering cases including cantilever and double cantilever micro-beam are considered. Considering the mid-plane stretching as the source of the nonlinearity in the beam behavior, a nonlinear size-dependent Euler-Bernoulli beam model is used based on a modified couple stress theory, c...