This is the first of two parts, where we report the structure determination of a novel family of cluster-based intermetallic phases of unprecedented complexity: cF444-Al(63.6)Ta(36.4) (AT-19), a = 19.1663 (1) A, V = 7040 A3, cF(5928-x)-Al(56.6)Cu(3.9)Ta(39.5), x = 20 (ACT-45), a = 45.376 (1) A, V = 93,428 A(3) and cF(23,256-x)-Al(55.4)Cu(5.4)Ta(39.1), x = 122 (ACT-71), a = 71.490 (4) A, V = 365...

Copper films of different thicknesses between 0.2 and 2 microns were electroplated on adhesion-promoting TiW and Ta barrier layers on <100> single crystal 6-inch silicon wafers. The residual stress was measured after each processing step using a wafer curvature technique employing Stoney’s equation. Large gradients in the stress distributions were found across each wafer. Controlled Cu grain gr...

Ta-N (10 nm)/Zr (20 nm) film was grown on n-type (100) silicon wafer at various substrate temperatures in a rf magnetron sputtering system, followed by situ deposition of Cu. The Cu/Ta-N/Zr/Si samples were subjected to thermal annealing up 800 ℃ under the protection pure nitrogen gas. In order investigate effect insertion thin Zr layer diffusion barrier performance Cu metallization, contact sys...

Aluminum and copper are widely used for microelectronic interconnect applications. Interfacial oxides can cause device performance degradation and failure by significantly increasing electrical resistance. Interfacial oxide layers found in Al/Ta and Ta/Cu metal stacks were studied using Transmission Electron Microscopy (TEM) combined with Energy Dispersive Spectroscopy (EDS) and Parallel Electr...

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