The manufacturing of modern semiconductor devices involves a complex set of nanoscale fabrication processes that are energy and resource intensive. There is a need for a comprehensive analysis of environmental impacts when an innovative new manufacturing approach emerges for semiconductor circuits. FinFET devices, a special kind of quasi-planer double gate devices, have been introduced as the n...

1 Research Scholar of Sagar Institute of Research & Technology, Bhopal, Madhya Pradesh, India 2 Professor, Dept. of Electronics and Communication, Sagar Institute of Research & Technology, Bhopal, Madhya Pradesh, India. __________________________________________________________________________________________ Abstract: Scaling of devices in bulk CMOS technology contributes to short channel effe...

In this study, we developed a facilitated ferroelectric high-k/metal-gate n-type FinFET based on Hf0.5Zr0.5O2. We investigated the impact of hysteresis effect device characteristics various fin-widths and degradation induced by stress (Fe-FinFET). clarified electrical conducted related reliability inspections. For Fe-FinFET, behavior Hf0.5Zr0.5O2-based gate stack in Si-fin body is apparent, esp...

Among multi-gate field effect transistor (FET) structures, FinFET has better short channel control and ease of manufacturability when compared to other conventional bulk devices. The radio frequency (RF) performance of FinFET is affected by gate-controlled parameters such as transconductance, output conductance, and total gate capacitance. In recent years, high-k spacer dielectric materials for...

Recent experimental studies reveal that FinFET devices commercialized in recent years tend to suffer frommore severe NBTI degradation compared to planar transistors, necessitating effective techniques on processors built with FinFET for endurable operations. We propose to address this problem by exploiting the device heterogeneity and leveraging the slower NBTI aging rate manifested on the plan...

In the world of Integrated Circuits, Complementary Metal–Oxide– Semiconductor (CMOS) has lost its credentiality during scaling beyond 32nm. Scaling causes severe Short Channel Effects (SCE) which are difficult to suppress. As a result of such SCE many alternate devices have been studied. Some of the major contestants include Multi Gate Field Effect Transistor (MuGFET) like FinFET and Carbon Nan...

Industry demands Low-Power and HighPerformance devices now-a-days. Among the various embedded memory technologies, SRAM provides the highest performance along with low standby power consumption. In CMOS circuits, high leakage current in deep-submicron regimes is becoming a significant contributor to power dissipation due to reduction in threshold voltage, channel length, and gate oxide thicknes...

Sub-threshold leakage and process-induced variations in bulk-Si technology limit the scaling of SRAM into sub-32 nm nodes. New device architectures are being considered to improve control Vt and reduce short channel effects. Among the likely candidates, FinFETs are the most attractive option because of their good scalability and possibilities for further SRAM performance and yield enhancement t...

devices necessitate evaluating the SEU mechanisms of FinFET circuit stability at low supply voltages dissipation, it is also necessary over a range of voltages. FinFET proton exponential low simulations show that the weak variation of supply voltage critical charge Index Terms particles, Neutrons, Heavy The Semiconductor Industry Association (SIA) roadmap has identified power dissipation as one...

As CMOS electronic devices are continuously shrinking to nanometer regime, leads to increasing the consequences of short channel effects and variability due to the process parameters which lead to cause the reliability of the circuit as well as performance. To solve these issues of CMOS, FINFET is one of the promising and better technologies without sacrificing reliability and performance for i...