Scaling of single-gate MOSFET faces great challenges in the nanometer regime due to the severe shortchannel effects that cause an exponential increase in the sub-threshold and gate-oxide leakage currents. Double-gate FinFET technology mitigates these limitations by the excellent control over a thin silicon body by two electrically coupled gates. In this paper a variable threshold voltage keeper...

The effect of gate – drain/source underlap (Lun) on a narrow band LNA performance has been studied, in 30 nm FinFET using device and mixed mode simulations. Studies are sssssdone by maintaining and not maintaining the leakage current (Ioff) and threshold voltage (Vth) of the various devices. LNA circuit with two transistors in a cascode arrangement is constructed and the input impedance, gain a...

This paper describes the characteristics comparison of bulk FINFET and SOI FINFET. The scaling trend in device dimension require limit on short channel effect through the control of subthreshold slope and DIBL characteristics.It can be achieved by proper device design. The subthreshold characteristics are plotted with the variation of gate voltage for different doping profile .This paper also c...

High performance PMOSFETs with a gate length as short as 18-nm are reported. A self-aligned double-gate MOSFET structure (FinFET) is used to suppress the short channel effect. The 45 nm gate-length PMOS FinFET has an Idsat of 410 PA/Pm (or 820 PA/Pm depending on the definition of the width of a double-gate device) at Vd = Vg = 1.2 V and Tox = 2.5 nm. The quasi-planar nature of this variant of t...

A comprehensive study of the scaling negative capacitance FinFET (NC-FinFET) is conducted with TCAD. We show that NC-FinFET can be scaled to "2.1nm node" and almost "1.5nm comes two nodes after industry "3nm node," which has 16nm Lg last node according International Roadmap for Devices Systems (IRDS). In addition, intervening nodes, meet IRDS Ion Ioff target at target-beating VDD. The benefits ...

The presentation of FinFET Technology has opened new sections in Nano-innovation. The arrangement of ultra-thin fin empowers stifled short channel effects. It is an alluring successor to the single gate MOSFET by the righteousness of its prevalent electrostatic properties and relative simplicity of manufacturability. Fin type field-impact transistors (FinFETs) are promising substitutes for mass...

A modeling study of dynamic threshold voltage in high K gate stack is reported in this paper. Both slow transient (STCE) and fast transient charging effect (FTCE) are included in this model. Finally, this model is applied in FinFET reliability and circuit performances are simulated. The result shows that, the drain circuit (Id) degradation in FinFET is much more obvious than normal MOSFETs with...