Keywords: Soft error Bulk FinFET MUSCA SEP3 VLSI design Supply voltage Soft error sensitivity a b s t r a c t This work presents a comparative soft error evaluation of logic gates in bulk FinFET technology from 65-down to 32-nm technology generations. Single Event Transients induced by radiations are modeled with the MUSCA SEP3 tool, which explicitly accounts for the layout and the electrical p...

Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET" (2008). Birck and NCN Publications. Paper 129.

When working for low power application the main estimation is to reduce leakage components and parameters. This stanza explores a vast link towards low leakage power SRAM cells using new technology and devices. The RAM contains bi-stable cross coupled latch which has V_th higher in write mode access MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and lower V_th in read access mode MO...

FinFET transistors have emerged as novel devices having superior controls over short channel effects (SCE) than the conventional MOS transistor devices. However, FinFET exhibit certain undesirable characteristics such as corner effects, quantum effects, tunneling etc. Usually, the corner effect deteriorates the performance by increasing the leakage current. In this work, the corner effect of Tr...

Finite Elements Method simulation of Total Ionizing Dose effects on 22 nm bulk Fin Field Effect Transistor (FinFET) devices using the commercial software Synopsys Sentaurus TCAD are presented. The simulation parameters are extracted by calibrating the charge trapping model to experimental results on 400 nm SiO2 capacitors irradiated under zero bias. The FinFET device characteristics are calibra...

For the prediction of the device performance of FinFET structures three-dimensional device simulation is inevitable. Due to the strong quantum mechanical confinement in the channel, quantum correction models need to be applied. Two of these models, where one is based on the correction of the densityof-states in a pre-processing step and the other calculates a correction for the band edge energy...

In this work, we use an experimentally calibrated 3D quantum mechanically corrected device simulation to study the random dopant fluctuation (RDF) on DC characteristics of 16-nm-gate trapezoidal bulk fin-type field effect transistor (FinFET) devices. The fixed top-fin width, which is consistent with the realistic process by lithography, of trapezoidal bulk FinFET devices is considered in this s...