A recent muon spin rotation ($\mu^+$SR) study on a paramagnetic defect complex formed upon implantation of $\mu^+$ pseudo-proton into SrTiO$_3$ is reviewed with specific focus the relation experimental signatures coexisting delocalized and localized electrons in hydrogen-irradiated metallic films. The complex, composed interstitial Ti$^{3+}$ small polaron, characterized by dissociation energy a...

Layered Ti-Al metal composite (LMC) fabricated by hot-pressing and hot-rolling process displays higher ductility than that of both components. In this paper, a combination of digital image correlation (DIC) and X-ray tomography revealed that strain delocalization and constrained crack distribution are the origin of extraordinary tensile ductility. Strain delocalization was derived from the tran...

Transition-edge sensors (TESs) are single photon detectors attractive for applications in quantum optics and quantum information experiments owing to their photon number resolving capability. Nowadays, high-energy resolution TESs for telecommunication are based on either W or Au/Ti films, demonstrating slow recovery time constants. We report our progress on the development of an Al/Ti TES. Sinc...

The densification behavior, microstructure and mechanical properties of bulk TiB₂-based ceramic composites, fabricated using the spark plasma sintering (SPS) technique with elements of (Fe-Ni-Ti-Al) sinter-aid were investigated. Comparing the change of shrinkage displacement of pure TiB₂ and TiB₂-5 wt% (Fe-Ni-Ti-Al), the addition of elements Fe-Ni-Ti-Al into TiB₂ can facilitate sintering of the...

Ti and solution treated Mg alloys such as AZ31B (ST), AZ61 (ST), AZ80 (ST) and AZ91 (ST) were successfully bonded at 475 °C by spark plasma sintering, which is a promising new method in welding field. The formation of Ti₃Al intermetallic compound was found to be an important factor in controlling the bonding strength and galvanic corrosion resistance of dissimilar materials. The maximum bonding...

The results on measuring the I--V characteristics of metal-semiconductor transition within Ti (200 nm)|Si@O@Al (180 nm)|Ti (203 nm) test structure are presented. basis Si@O@Al nanocomposite is a solid solution Al in amorphous silicon a-Si(Al). has form characteristic reverse-biased ohmic contact between metal and p-type semiconductor, which implies that a-Si(Al) substitutional solution. It show...

Semiempirical interatomic potentials have been developed for Al, a-Ti, and g-TiAl within the embedded atom method ~EAM! formalism by fitting to a large database of experimental as well as ab initio data. The ab initio calculations were performed by the linearized augmented plane wave ~LAPW! method within the density functional theory to obtain the equations of state for a number of crystal stru...

We introduce a CW two-color Ti : sapphire laser for terahertz spectroscopic applications. The laser provides two parallel beams at independently tunable wavelengths allowing one to select a difference frequency in the range from below 20 GHz to 50 THz. The laser is pumped by a single 6-W pump beam in order to keep the setup as simple as possible. Under these conditions, output powers of 150 mW ...

A laminated Ti-Al composite has been fabricated by hot compaction and hot rolling of alternate layers of commercial purity Ti and Al sheets with a thickness of 200 μm. The hot compaction temperature was 500 ̊C and in a following step the composite has been reduced 50% in thickness by hot rolling. The fully consolidated composite has been annealed at 300 ̊C and 500 ̊C for different length of time. ...