C. A. Fuchs and M. Sasaki defined the quantumness of a set of quantum states in [1], which is related to the fidelity loss in transmission of the quantum states through a classical channel. In [4], Fuchs showed that in d-dimensional Hilbert space, minimum quantumness is 2 d+1 , and this can be achieved by all rays in the space. He left an open problem, asking whether fewer than d states can ach...

Aims. The SiC optical constants are fundamental inputs for radiative transfer (RT) models of astrophysical dust environments. However, previously published values contain errors and do not adequately represent the bulk physical properties of the cubic (β) SiC polytype usually found around carbon stars. We provide new, uncompromised optical constants for βand α-SiC derived from single-crystal re...

Performance of optical code division multiple access (O-CDMA) system is influenced by multiple access interference (MAI) resulted from the overlapping between the users. To overcome this problem, successive interference cancellation (SIC) scheme is applied to O-CDMA systems. In this paper we apply successive interference cancellation technique to a spectral amplitude coding (SAC) system that us...

Different sublimation growth conditions of 3C-SiC approaching a bulk process have been investigated with the focus on appearance of macrodefects. The growth rate of 3C-SiC crystals grown on 6H-SiC varied from 380 to 460 μm/h with the thickness of the crystals from 190 to 230 μm, respectively. The formation of macrodefects with void character was revealed at the early stage of 3C-SiC crystal gro...

Single crystal 3C-SiC films were grown on (100) and (111) Si substrate orientations in order to study the resulting mechanical properties of this material. In addition, poly-crystalline 3CSiC was also grown on (100)Si so that a comparison with monocrystaline 3C-SiC, also grown on (100)Si, could be made. The mechanical properties of single crystal and polycrystalline 3C-SiC films grown on Si sub...

Soil inorganic carbon (SIC) and organic carbon (SOC) are important carbon reservoirs in terrestrial ecosystems. However, little attention was paid to SIC dynamics in cropland. We conducted a survey in the upper Yellow River Delta of North China Plain. We collected 155 soil samples from 31 profiles, and measured SOC, SIC and soluble Ca2+ and Mg2+ contents. Our results showed that mean SOC conten...

The growth properties of b-SiC on ~100! Si grown by rapid thermal chemical vapor deposition, using a single precursor ~methylsilane! without an initial surface carbonization step, were investigated. An optimun growth temperature at 800 °C was found to grow single crystalline materials. A simple Al Schottky barrier fabricated on n-type SiC grown on Si substrates exhibited a ‘‘hard’’ reverse brea...