1 W/mm Output Power Density for H-Terminated Diamond MOSFETs With Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub> Bi-Layer Passivation at 2 GHz
نویسندگان
چکیده
We have demonstrated a novel method of depositing ALD-Al 2 O xmlns:xlink="http://www.w3.org/1999/xlink">3 /PECVD-SiO bi-layer dielectric to passive the surface channels hydrogen-terminated diamond (H-diamond). After Al /SiO passivation, current increased with time and then tended be saturated. Afterwards, it became much more stable showed larger than an unpassivated counterpart. The H-diamond MOSFETs were fabricated by using this passivation structure extremely low Ohmic contact resistance 0.87 Ω·mm was obtained. RF MOSFET gate length 0.45 μm achieved high density -549 mA/mm extrinsic fT/fmax 15/36 GHz. By load-pull measurement, output power 1.04 W/mm obtained at frequency 2 results reveal that is promising solution for high-stable high-power transistors passivation.
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ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2021
ISSN: ['2168-6734']
DOI: https://doi.org/10.1109/jeds.2020.3046603