2-Phenylally-ended Poly(.ALPHA.-Methylstyrene) Derivatives for Electron-Beam Resist.

Polystyrene negative resist for high-resolution electron beam lithography

We studied the exposure behavior of low molecular weight polystyrene as a negative tone electron beam lithography (EBL) resist, with the goal of finding the ultimate achievable resolution. It demonstrated fairly well-defined patterning of a 20-nm period line array and a 15-nm period dot array, which are the densest patterns ever achieved using organic EBL resists. Such dense patterns can be ach...

Electron beam lithography on irregular surfaces using an evaporated resist.

An electron beam resist is typically applied by spin-coating, which cannot be reliably applied on nonplanar, irregular, or fragile substrates. Here we demonstrate that the popular negative electron beam resist polystyrene can be coated by thermal evaporation. A high resolution of 30 nm half-pitch was achieved using the evaporated resist. As a proof of concept of patterning on irregular surfaces...

Resist Mechanisms and Models in Electron-beam Lithography

Sub-5 keV Electron-Beam Lithography in Hydrogen Silsesquioxane Resist

We fabricated 9 to 30 nm half-pitch nested Ls and 13 to 15 nm half-pitch dot arrays, using 2 keV electron-beam lithography with hydrogen silsesquioxane (HSQ) as the resist. All structures with 15 nm half-pitch and above were fully resolved. We observed that the 9 and 10-nm half-pitch nested L’s and the 13-nm-half-pitch dot array contained some resist residues. We obtained good agreement between...

High molecular weight polystyrene as very sensitive electron beam resist

0167-9317/$ see front matter 2012 Elsevier B.V. A http://dx.doi.org/10.1016/j.mee.2012.07.005 ⇑ Corresponding author. Tel.: +1 519 729 3582. E-mail addresses: [email protected], j24 (J. Zhang). Previously we demonstrated ultra-dense patterning using 2 kg/mol polystyrene negative electron beam resist that has low sensitivity [16]. To drastically improve its sensitivity, here we studied the expos...