3C-SiC growth by sublimation in vacuum technology optimization
نویسندگان
چکیده
منابع مشابه
Sublimation growth of thick freestanding 3C-SiC using CVD-templates on silicon as seeds
Cubic silicon carbide is a promising material for medium power electronics operating at high frequencies and for the subsequent growth of gallium nitride for more efficient light emitting diodes. We present a new approach to produce freestanding cubic silicon carbide (3C-SiC) with the ability to obtain good crystalline quality regarding increased domain size and reduced defect density. This wou...
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The hetero epitaxial growth of 3C-SiC on nominally on-axis 4H-SiC is reported. A horizontal hot-wall CVD reactor working at low pressure is used to perform the growth experiments in a temperature range of 1200-1500 °C with the standard chemistry using silane and propane as precursors carried by a mix of hydrogen and argon. The optimal temperature for single-domain growth is found to be about 13...
متن کاملProgress in 3C-SiC growth and novel applications
Recent research efforts in growth of 3C-SiC are reviewed. Sublimation growth is addressed with an emphasis on the enhanced understanding of polytype stability in relation to growth conditions, such as supersaturation and Si/C ratio. It is shown that at low temperature/supersaturation spiral 6H-SiC growth is favored, which prepares the surface for 3C-SiC nucleation. Provided the supersaturation ...
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The growth of 3C-SiC on hexagonal polytype is addressed and a brief review is given for various growth techniques. The Chemical Vapor Deposition is shown as a suitable technique to grow single domain 3C epilayers on 4H-SiC substrate and a 12.5 μm thick layer is demonstrated; even thicker layers have been obtained. Various characterization techniques including optical microscopy, X-ray technique...
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We report results from density-functional plane-wave pseudopotential calculations for carbon and silicon self-interstitials in cubic silicon carbide (3CSiC). Several initial ionic configurations are used in the search for the global totalenergy minimum including tetragonal, split [100] and split [110] geometries. Neutral carbon interstitials are found to have several nearly degenerate total-ene...
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ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2020
ISSN: 1742-6588,1742-6596
DOI: 10.1088/1742-6596/1697/1/012070