43.2: <i>Invited Paper:</i> High Mobility Oxide Complementary TFTs for System‐on‐Display and Three‐Dimensional Brain‐Mimicking IC

Demonstration of high-mobility electron and hole transport in a single InGaSb well for complementary circuits

Heterostructures consisting of an InGaSb quantum well situated between AlGaSb barriers were grown by molecular beam epitaxy. Calculations indicate a type-I band structure with substantial valence and conduction band offsets that can allow for the confinement of either electrons or holes in the InGaSb. Quantum wells with n-type conduction were achieved using modulation doping, with Te located in...

High-mobility hydrogenated indium oxide without introducing water during sputtering

The key role of water to obtain high-mobility IO:H (hydrogenated indium oxide) layers has been well documented, but introducing the required tiny amount of water is technologically challenging. We first use simulations to evidence the key role of high mobility for the transparent conductive oxide for high-efficiency crystalline silicon solar cells. Then, we investigate an approach to fabricate ...

Effect of High-K Oxide Layer on Carrier Mobility

ABSTRACT: Over the past three decades CMOS has emerged as the basis of design in nanotechnology. MOSFETS provide an easier way of fabrication due to their ease of manufacturing and lower power consumption than the BJTs. However the use of high k materials to follow Moore’s Law, has created certain problems in the working of these devices. In this review we have dealt with the mobility related i...

Patterning of high mobility electron gases at complex oxide interfaces

High-κ oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors

Deposition of high-κ dielectrics onto graphene is of significant challenge due to the difficulties of nucleating high quality oxide on pristine graphene without introducing defects into the monolayer of carbon lattice. Previous efforts to deposit high-κ dielectrics on graphene often resulted in significant degradation in carrier mobility. Here we report an entirely new strategy to integrate hig...